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Abstract ▼ AI-Helper

Linear annealing method was developed to increase the bond strength of Si wafer pair mated at room tem­perature instead of conventional furnace annealing method. It has been known that the interval of the two mating wafer surfaces decreases and the density of gaseous phases generated at the interfac...

Linear annealing method was developed to increase the bond strength of Si wafer pair mated at room tem­perature instead of conventional furnace annealing method. It has been known that the interval of the two mating wafer surfaces decreases and the density of gaseous phases generated at the interface increases with increase in an-nealing temperature. The new annealing method consisting of one heat source and light reflecting mirror used these two phenomena and was applied to Si$\mid$$\mid$Si and Si$\mid$$\mid$$SiO_2/Si$ bonding. The bonding interface observed directly by using IR camera and HRTEM showed clear bonding interface without any unbonded areas except the area generated by the dusts inserted into the mating interface at the room temperature. Crack opening method and direct tensile test was ap­pplied to measure the bond strength. The two methods showed similar results. The bond strength increased continuous­tly with the increase of annealing temperature.

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