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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.37 no.4 = no.274, 2000년, pp.31 - 37
김태경 (서울대학교 재료공학부) , 김기범 (서울대학교 재료공학부) , 윤여건 (서울대학교 재료공학부) , 김창훈 (서울대학교 재료공학부) , 이병일 (서울대학교 재료공학부) , 주승기 (서울대학교 재료공학부)
In the case of metal-induced lateral crystallization (MILC) for low temperature poly-Si TFT, offset length between Ni-thin film and the sides of gate could be modified to control the location of MILC boundary. Electrical characteristics were compared to analyze the effect of MILC boundary that was l...
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