초록

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Abstract ▼ AI-Helper

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the c...

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the characteristics of field emission display (FED). With the increase of boron doping, the crystal size of diamond decreased slightly, but its quality was not changed significantly in case of small doping. The I-V characterization was performed for Al/diamond/p-Si, and the current of doped diamond film was increased $10^4\sim10^5$ times as compared with that of undoped film. In the field emission properties, the electrons were emitted with low electric field with the increase of doping, while the emission current increased. The onset-field of electron emission was 15.5 V/$\mu\textrm{m}$ for 2 pellets, 13.6 V/$\mu\textrm{m}$ for 3 pellets and 11.1 V/$\mu\textrm{m}$ for 4 pellets. With the incorporation of boron, the slope of Fowler-Nordheim graph was decreased, revealing that the electron emission behavior was improved with the decrease of the effective barrier energy.