참고문헌 (36)

1. H.S. Oh, H.L. Lee, 'A Comparative Study between Total Thickness Variance and Site Flatness of Polished Silicon Wafer,' Jpn. J. of Appl. Phys. Vol. 40 pp. 5300-5301, 2001 

   상세보기

2. K. Ravi, 'Wafer flatness requirement for future technologies,' Future Fab International, Vol. 7, pp. 207-212, 1999 

3. R. Vandamme, Y. Xin, and Z.J. Pei, 'Method of processing semiconductor wafers,' US Patent 6114245, 2000 

4. R.L. Lane, 'Silicon Wafer Preparation' Handbook of Semiconductor Silicon Technology, Ed. by W. C. O'Mara, R.B. Herring, L.P. Hunt, Noyes Publication, pp. 192 - 257, 1990 

5. H.M. Liaw, 'Crystal Growth of Silicon,' Handbook of Semiconductor Silicon Technology, Ed. by W.C. O'Mara, R.B. Herring, L.P. Hunt, Noyes Publication, pp. 94-181, 1990 

6. R. Lutwack and A. Morrison, Silicon Material Preparation and Economical Wafering Methods, Noyes Publications, 1982 

7. R.B. Herring, 'Silicon wafer technology - state of the art 1976,' Solid State Technology/May, pp. 37-54, 1976 

8. E. Steffen, J. Schandl, J. Junge, H. Lundt, 'Manufacturing Processes for Advanced Silicon ULSI Wafers,' in Semiconductor Silicon/1994, Ed. by H. R. Huff, W. Bergholz, K. Sumino, The Electrochem. Soc., pp. 197-206, 1994 

9. H.S. Oh, S.E. Park, S.M. Jeong, S.S. Kim, H.L. Lee, 'Process induced mechanical damage and fine grinding process parameters,' To be Pblished at the 4th international sysmposium on advances in abrasive technology(ISAAT '2001) 

10. E. Mendel, 'Polishing of Silicon,' SCP and Sol. State Tech. Vol. 8,pp. 27-39, 1967 

11. R.J. Walsh, 'Process for polishing semiconductor materials,' US Patent 3170273, 1965 

12. G.H. Schwuttke, 'Pre- and Post-Annealing of Mechanicla Damage in Silicon Wafer,' in Silicon Material Preparation and Economical Wafering Methods, Ed by R. Lutwack, A. Morrision, Noyes Publications, pp. 562-576, 1982 

13. W. Kern and D.A. Puotinen, 'Clean Solution Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology,' RCA Review, Vol. 31, 187, 1970 

14. Test method F950-88, 'Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching,' ASTM 

15. H. Lundt, M. Kerstan, A. Huber, P.O. Hahn, 'Subsurface Damage of Abraded Silicon Wafer,' in Semiconductor Silicon/1994, Ed. by H.R. Huff, W. Bergholz and K. Sumino, The Electrochemical Society, pp. 218-224, 1994 

16. S.M.Jeong, S.E.Park, H.S.Oh and H.L.Lee, 'Fracture strength evaluation of semiconductor silicon wafering process induced damage,' Proceeding volume of annual meeting, American Society for Precision Engineering, 199-123, 2000 

17. ASTM F121-83 

18. Operation recipe, MEMC Korea Co. 

19. K. Kugimiya, 'Characterization of Microdeformation and Crystal Defects in Silicon Wafer Surfaces,' J. Electrochem. Soc., Vol. 130, 2123, 1983 

    상세보기

20. K. Kugimiya, 'Characterization of Polished Mirror Surfaces by the 'Makyoh' Principle,' Mat. Lett. Vol. 7,pp.229-233, 1988 

    상세보기

21. YIS-200SP manual, Hologenix, Inc., Torrance, CA, USA 

22. K. Kugimiya, 'Makyoh topography : comparison with X-ray topography', Semicon. Sci. Technol. Vol. 7, pp. A91-94, 1992 

    상세보기

23. S. Tokura, N. Fujino, M. Ninomiya and K. Masuda, 'Characterization of mirror-polished wafers by Makyo Method,' J. of Crystal Growth, Vol. 103, pp. 437-442, 1990 

    상세보기

24. P. Blaustein and S. Hahn, 'Realtime Inspection of Wafer Surfaces,'Solid State Technology, Vol. 32, pp. 27-29, 1989 

25. O. Okabayashi, H. Shirotori, H. Sakurazawa, E. Kanda, T. Yokoyama and M. Kawashima, 'Evaluation of Directly Bonded Silicon Wafer Interface by the Magic Mirror Method,' J. of Crystal Growth, Vol. 103, pp. 456-460, 1990 

    상세보기

26. T. S. Kuan, K. K. Shih and J. A. Vand Vechten, 'Effect of Lubricant Environment on Saw Damage in Si Wafers,' J. Electrochem. Soc., Vol. 127, 1387, 1980 

    상세보기

27. F. Shimura, 'Semiconductor Silicon Crystal Technology,' Academic Press. Inc., London, pp. 215-278, 1989 

28. Test method F28-91, 'Standard Test methods for Minority- Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photocondectivity Decay,' ASTM 

29. T. S. Horanyi, T. Pavelka and P.Tutto, 'In situ bulk lifetime measurement on silicon with a chemially passivated surface,' Appl. Surf. Sci., Vol. 63 pp. 306-311, 1993 

    상세보기

30. W. M. Bullis and H. R. Huff, 'Interpretation of Carrier Recombination Lifetime and Diffusion Length Measurement in Silicon,' J. Electrochem. Soc, Vol. 143, pp. 1399-1405, 1996 

    상세보기

31. D. K. Schroder. 'Carrier Lifetime in Silicon,' IEEE Trans. Electron. Devices, Vol. 44, pp. 160-170, 1997 

    상세보기

32. Lifetime Scanner WT-85 User's Manual, Semilab Co., Budapest, Hungary 

33. H. S. Oh, H. J. Maeng, K. M. Bae, J. R. Kim, Y. K. Hong, J. S. Shin, J. H. Kwon, G. A. Rozgonyi and H. L. Lee, 'The Characterization of 0.1 LPD Patterns in Mass Production of Silicon Wafer,' in Semiconductor Silicon 1998, Ed. ,H. R. Huff, U. Gosele, H. Tsuya, The Electrochemical Society, 1998 

34. A. Mayer, 'Detection of Damage on Silicon Surgaces: Origin and Propagation of Defects,' RCA Review, Vol. 31, No. 2, pp. 414-425, 1970 

35. H.S. Oh, S.E. Park and H.L. Lee, 'Surface wheel pattern analysis and grinding process parameters of Silicon,' to be published at J. of KSPE, Vol. 19, No. 2, 2002 

    원문보기 상세보기

36. J. Pei, S.R. Billingsley and S. Miura. 'Grinding induced subsurface cracks in silicon wafers,' International Journal of Machine Tools and Manufacture, Vol. 39, pp. 1103-1116, 1999 

    상세보기

저자의 다른 논문 :

이홍림 (87)