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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.40 no.8 = no.314, 2003년, pp.555 - 559
In this paper, a new CMOS RF model for RF IC design including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for tile first time for accurately predicting the RF behavior of CMOS devices. The capacitances between metal lines on the...
C. S. Kim and H. K. Yu, 'The present and the future of RF CMOS technology,' The magazine of the IEEK, vol.29, no.9, pp. 18-30, Sep. 2002
C. Enz, 'An MOS transistor model for RF IC design valid in all regions of operation,' IEEE Trans. on Microwave Theory and Techniques, vol.50, no.1, pp. 342-359, Jan. 2002
J.J. Ou, X. Jin, P. R. Gray, and C. Hu, 'Recent developments in BSIM for CMOS RF ac and noise modeling,' Presentation for the Workshop on Advances in Analog Circuit Design, Nice, France, March 1999
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