A trench MOS barrier Schottky (TMBS) rectifier is proposed which utilizes the upper half of the trench sidewall as an active area. The proposed structure improves the forward voltage drop by 20$\%$ in comparison with the conventional one without degradation in breakdown voltage. An analytical model for the field distribution is given and compared with two-dimensional numerical simulations.
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Kim, Byung-Soo ; Kim, Kwang-Soo 2013. "A 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier using the trapezoid mesa and the upper half of sidewall" 전기전자학회논문지 = Journal of IKEEE, 17(4): 428~433