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NTIS 바로가기Journal of the Optical Society of Korea, v.9 no.2, 2005년, pp.39 - 44
Jang Y. R. (Department of Physics and Research Institute for Basic Sciences, Kyung Hee University) , Yoo K. H. (Department of Physics and Research Institute for Basic Sciences, Kyung Hee University) , Ram-Mohan L. R. (Departments of Physics, Electrical and Computer Engineering, Worcester Polytechnic Institute)
Unlike for the bound states, several different boundary conditions are used for the continuum states above the barrier in semiconductor quantum wells. We employed three boundary conditions, infinite potential barrier boundary condition, periodic boundary condition and scattering boundary condition, ...
S. T. Yen and C.-P. Lee, 'Theoretical analysis of 630 nm band GalnP-AIGalnP strained quantum-well lasers considering continuum states,' IEEE J. Qunatum Electron., vol. 33, no. 3, pp. 443-456, 1997
H. Hirayama, Y. Miyaki and M. Asada, 'Analysis of current injection efficiency of separate-confinement-heterostructure quantum-film lasers,' IEEE J. Qunatum Electron., vol. 38, no. 1, pp. 68-74, 1992
B. F. Levine, C. G. Bethea, K. K. Choi, J. Walker and R. J. Malik, 'Bound-to-extended state absorption GaAs superlattice transport infrared detectors,' J. Appl. Phys., vol. 64, no. 3, pp. 1591-1593, 1988
B. F. Levine, G. Hasnain, C. G. Bethea and N. Chand, 'Broadband 8-12 ${\mu}$ m high-sensitivity GaAs quantum well infrared photodetector,' Appl. Phys. Lett., vol. 54, no. 26, pp. 2704-2706, 1989
Y. Fu, 'Boundary conditions of continuum states in characterizing photocurrent of GaAs/AIGaAs quantum well infrared photodetector,' Superlattices and Microstructures, vol. 30, no. 2, pp. 69-74, 2001
J. D. Bruno and T. B. Bahder, 'Local density of states in double-barrier resonant-tunneling structures, II. Finite-width barriers,' Phy. Rev. B, vol. 39, no. 6, pp. 3659-3663, 1989
S. Fafard, 'Energy levels in qunatum wells with capping barrier layer of finite size: bound states and oscillatory behavior of the continuum states,' Phys. Rev. B, vol. 46, no. 8, pp. 4659-4666, 1992
Rusli, T. C. Chong and S. J. Chua, 'Theoretical analysis of bound-to-continuum state infrared absorption in Ga As/ AlxGalxAs quantum well structures,' Jpn. J. Appl. Phys., vol. 32, part 1, no. 5A, pp. 1998-2004, 1993
T. B. Bahder, J. D. Bruno, R. G. Hay and C. A. Morrison, 'Local density of states in double-barrier resonant-tunneling structures,' Phys. Rev. B, vol. 37, no. 11, pp. 6256-6261, 1988
G. Iannaccone, 'General relation between density of states and dwell times in mesoscopic systems,' Phys. Rev. B, vol. 51, no. 7, pp. 4727-4729, 1995
L. I. Shiff, Quantum Mechanics (McGraw-Hill, New York, USA, 1949), pp. 41-103
R. Shankar, Principles of Quantum Mechanics, 2nd ed. (Plenum, New York, USA, 1994), pp. 167-175
W. Trzeciakowski and M. Gurioli, 'Electric-field effects in semiconductor quantum wells,' Phys. Rev. B, vol. 44, no. 8, pp. 3880-3890, 1991
G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physique, Les Ulis, France, 1988), pp. 63-113 and pp. 237-257
I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, 'Band parameters for III-V compound semiconductors and their alloys,' J. Appl. Phys., vol. 89, no. 11, pp. 5815-5875, 2001
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