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NTIS 바로가기한국해양정보통신학회논문지 = The journal of the Korea Institute of Maritime Information & Communication Sciences, v.10 no.3, 2006년, pp.479 - 485
The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subth...
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T.Schulz, W.Rosner, E.Landgraf, L.Risch and U.Langmann, 'Planar and vertical double gate concepts,' Solid-State Electronics, vol.46, pp.985-989, 2002
H.R.Huff and P.M.Zeitzoff, 'The Ultimate CMOS Device: A 2003 Perspective,' in the 2003 Int. Conf. Characterization and Metrology for ULSI Technology, pp.1-17, 2003
L.Chang, Y.K.Choi, D.Ha, P.Ranade, S,Xiong, J.Bokor, C.Hu and T.J.King, 'Extremely Scaled Silicon Nano-CMOS Devices,' Proc. of IEEE, vol.91, pp.1860-1873, 2003
K.Kim and J.G.Foosum, 'Double-gate CMOS; Symmetrical versus asymmetrical gate devices,' IEEE Trans. Electron Devices, vol.48, pp.294-299, 2001
J.S.Park, H.Shin, D.Connelly, D. Yergeau, Z.Yu, and R.W.Dutton, 'Analysis of 2D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method', Solid-State Electronics, vol.48, pp.1163-1168, 2004
D.Munteanu and J.L.Autran, 'Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices', Solid-State Elec. vol.47, pp.1219-1225, 2003
M.Bescond, J.L.Autran, D.Munteanu and M.Lannoo, 'Atomic-scale modeling of double gate MOSFETs using a tight- binding Green's function formalism', Solid-State Elec., vol.48, pp.567-574, 2004
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