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NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.20 no.7, 2007년, pp.606 - 610
This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on the oxidized Si substrate by APCVD method according to growth temperature. Since the phonon modes were not measured for
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