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참고문헌 (9)

1. Frank Schwierz, Juin J. Loiu, MoDern Microwave Transistors - Theory, Design, and Performance, Wiley 

2. Kai Chang, Inder Bahl, and Vijay Nair, RF and Microwave Circuit and Component Design for Wireless Systems, Wiley 

3. B. O. Kim, M. K. Lee, T. J. Baek, M. Han, S. C. Kim, and J. K. Rhee, "50-nm T-Gate InAlAs/InGaAs metamorphic HEMT with low noise and high fT characteristics", IEEE Electron Device Lett., vol. 28, no. 7, p. 546 

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4. B. H. Lee, D. An, M. K. Lee, B. O. Lim, J. H. Oh, S. D. Kim, and J. K. Rhee, "Low conversion loss and high Lo-RF isolation 94-GHz active down converter", IEEE Trans. Microwave Theory and Tech., vol. 54, no. 6, p. 2422 

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5. D. An, B. H. Lee, B. O. Lim, M. K. Lee, S. C. Kim, J. H. Oh, S. D. Kim, H. M. Park, D. H. Shin, and J. K. Rhee, "High switching performance $0.1-{\mu}m$ metamorphic HEMTs for low conversion loss 94- GHz resistive mixer", IEEE Electron Device Lett., vol. 26, no. 10, p. 707 

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6. M. K. Lee, B. O. Lim, S J. Lee, D. S. Ko, S. W. Moon, D. An, Y H. Kim, S. D. Kim, H. C. Park, and J. K. Rhee, "A novel 94-GHz MHEMET-based diode mixer using a 3-dB tandem coupler", IEEE Microwave and Wireless Components Lett., vol. 18, no. 9, p. 626 

7. B. H. Lee, D. An, M. K., B. O. Lim, S. D. Kim, and J. K. Rhee, "Two-state broadband high-gain W-Band amplifier using 0.1 ${\mu}m$ metamorphic HEMT technology", IEEE Electron Device Lett., vol. 25, no. 12, p. 766 

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8. J. H. Ohm, M. Han, S. J. Lee, B. C. Jun, S. W. Moon, J. S. Lee, J. K. Rhee, and S. D. Kim, "Effects of multi-gate-feeding structure on gate resistance and RF characteristics of $0.1 {\mu}m$ metamorphic high-electron- mobility transistors", IEEE Trans. Microwave Theory and Tech., Submitted 

9. J. H. Oh, M. Han, S. W. Moon, S. Lee, and I. S. Hwang, "Dual gate-recess structure of metamorphic high electron mobility transistors for enhancing fmax", Journal of the Electrochemical Society, Accepted 

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