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NTIS 바로가기한국결정성장학회지 = Journal of the Korean crystal growth and crystal technology, v.19 no.2, 2009년, pp.75 - 78
배소익 ((주)포티조) , 한창운 ((주)포티조)
Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer
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