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RF CMOS Power Amplifiers for Mobile Terminals 원문보기

Journal of semiconductor technology and science, v.9 no.4, 2009년, pp.257 - 265  

Son, Ki-Yong (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ,  Koo, Bon-Hoon (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ,  Lee, Yu-Mi (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ,  Lee, Hong-Tak (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ,  Hong, Song-Cheol (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)

Abstract AI-Helper 아이콘AI-Helper

Recent progress in development of CMOS power amplifiers for mobile terminals is reviewed, focusing first on switching mode power amplifiers, which are used for transmitters with constant envelope modulation and polar transmitters. Then, various transmission line transformers are evaluated. Finally, ...

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  • 9. dc characteristics of (a) common-source structure, (b) cascode structure with the same device size.
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참고문헌 (23)

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  2. P. Haldi, D. Chowdhury, P. Reynaert, G. Liu, and A. M. Niknejad, "A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1054-1063, May 2008 

  3. C. Park, D. H. Lee, J. Han, and S. Hong, "Tournament-shaped magnetically coupled powercombiner architecture for RF CMOS power amplifier," IEEE Trans. Microw. Theory Tech., vol. 55, no. 10, pp. 2034-2042, Oct. 2007 

  4. K. H. An, O. Lee, H. Kim, D. H. Lee, J. Han, K. S. Yang, Y. Kim, J. J. Chang, W. Woo, C.-H. Lee, H. Kim, and J. Laskar, "Power-combining transformer techniques for fully-integrated CMOS power amplifiers," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1064-1075, May 2008 

  5. H. Lee, C. Park, and S. Hong, "A quasi-four-pair class-E CMOS RF power amplifier with an integrated passive device transformer," IEEE Trans. Microw. Theory Tech., vol. 57, no. 4, pp. 752-759, Apr. 2009 

  6. C. Park, Y. Kim, H. Kim, and S. Hong, "A 1.9-GHz CMOS power amplifier using three-port asymmetric transmission line transformer for a polar transmitter," IEEE Trans. Microw. Theory Tech., vol. 55, no. 2, pp. 230-238, Feb. 2007 

  7. C. Park, J. Han, H. Kim, and S. Hong, "A 1.8-GHz CMOS power amplifier using a dual-primary transformer with improved efficiency in the low power region," IEEE Trans. Microw. Theory Tech., vol. 56, no, 4, pp. 782-792, Apr. 2008 

  8. D. H. Lee, C. Park, J. Han, Y. Kim, S. Hong, C.-H. Lee, and J. Laskar, "A load-shared CMOS power amplifier with efficiency boosting at low power mode for polar transmitters," IEEE Trans. Microw. Theory Tech., vol. 56, no. 7, pp. 1565-1574, July 2008 

  9. S.-H. Baek, C. Park, and S. Hong, "A fully integrated 5-GHz CMOS power amplifier for IEEE 802.11a WLAN applications," Journal of Semiconductor Technology and Science, vol. 7, no. 2, pp. 98-101, June 2007 

  10. J. Kang, D. Yu, Y. Yang, and B. Kim, "Highly linear 0.18- ${\mu}m$ CMOS power amplifier with deep n-well structure," IEEE J. Solid-State Circuits, vol. 41, no. 5, pp. 1073-1080, May 2006 

  11. C. Wang, M. Vaidyanathan, and L. E. Larson, "A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers," IEEE J. Solid-State Circuits, vol. 39, no. 11, pp. 1927-1937, Nov. 2004 

  12. C. Lu, A.-V. H. Pham, M. Shaw, and C. Saint, "Linearization of CMOS broadband power amplifiers through combined multigated transistors and capacitance compensation," IEEE Trans. Microw. Theory Tech., vol. 55, no, 11, pp. 2320- 2328, Nov. 2007 

  13. S. Kang, B. Choi, and B. Kim, "Linearity analysis of CMOS for RF application," IEEE Trans. Microw. Theory Tech., vol. 51, no, 3, pp. 972-977, Mar. 2003 

  14. J. Kang, J. Yoon, K. Min, D. Yu, J. Nam, Y. Yang, and B. Kim, "A highly linear and efficient differential CMOS power amplifier with harmonic control," IEEE J. Solid-State Circuits, vol. 41, no. 6, pp. 1314-1322, June 2006 

  15. J. Kang, A. Hajimiri, and B. Kim, "A single-chip linear CMOS power amplifier for 2.4 GHz WLAN," in IEEE ISSCC Dig. Tech. Papers, Feb. 2006, pp. 208-209 

  16. A. Shirvani, D. K. Su, and B. A. Wooley, "A CMOS RF power amplifier with parallel amplification for efficient power control," IEEE J. Solid-State Circuits, vol. 37, no. 6, pp. 684-693, June 2002 

  17. P. Reynaert and M. S. J. Steyaert, 'A 2.45-GHz 0.13- ${\mu}m$ CMOS PA with parallel amplification," IEEE J. Solid-State Circuits, vol. 42, no. 3, pp. 551-562, Mar. 2007 

  18. G. Liu, P. Haldi, T.-J. K. Liu, and A. M. Niknejad, 'Fully integrated CMOS power amplifier with efficiency enhancement at power back-off," IEEE J. Solid-State Circuits, vol. 43, no. 3, pp. 600-609, Mar. 2008 

  19. K. H. Ahn, D. H. Lee, O. Lee, H. Kim, J. Han, W. Kim, C.-H. Lee, H. Kim, and J. Laskar, "A 2.4 GHz fully integrated linear CMOS power amplifier with discrete power control," IEEE Microw. Wireless Compon. Lett., vol. 19, no. 7, pp. 479-481, July 2009 

  20. M. Elmala, J. Paramesh, and K. Soumyanath, 'A 90-nm CMOS Doherty power amplifier with minimum AM-PM distortion,' IEEE J. Solid-State Circuits, vol. 41, no. 6, pp. 1323-1332, June 2006 

  21. J. Kang, D. Yu, K. Min, and B. Kim, 'A ultra-high PAE Doherty amplifier based on 0.13- ${\mu}m$ CMOS process," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 9, pp. 505-507, Sep. 2006 

  22. N. Wongkomet, L. Tee, and P. R. Gray, "A +31.5 dBm CMOS RF Doherty power amplifier for wireless communications," IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2852-2859, Dec. 2006 

  23. L.-Y. Yang, H.-S. Chen, and Y.-J. E. Chen, "A 2.4 GHz fully integrated cascode-cascade CMOS Doherty power amplifier,' IEEE Microw. Wireless Compon. Lett., vol. 18, no. 3, pp. 197-199, Mar. 2008 

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