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CHARACTERISTICS EVALUATION AND GROWTH OF $BI_4GE_3O_{12}$ SINGLE CRYSTAL BY CZOCHRALSKI METHOD 원문보기

방사선방어학회지 = Radiation protection : the journal of the Korean association for radiation protection, v.34 no.2, 2009년, pp.83 - 86  

Cho, Yun-Ho (Department of Nuclear Engineering, Hanyang University) ,  Kim, Yong-Kyun (Department of Nuclear Engineering, Hanyang University) ,  Lee, Woo-Gyo (Department of Nuclear Engineering, Hanyang University) ,  Kang, Byoung-Hwi (Department of Nuclear Engineering, Hanyang University) ,  Kim, Jong-Kyung (Department of Nuclear Engineering, Hanyang University) ,  Lee, Dong-Hoon (Department of Nuclear Engineering, Hanyang University) ,  Park, Jae-Woo (Department of Nuclear and Energy Engineering, Cheju University)

Abstract AI-Helper 아이콘AI-Helper

The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$

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제안 방법

  • The BGO single crystals were grown by the Czochralski technique. For characteristics of the grown crystals, the transmission, absorption, excitation, emission, gamma-ray spectra and energy resolution measurements were carried out. The emission and excitation have a peak at around 480 nm and at 302 nm respectively, and the shape is similar to that of typical BGO.
  • 05 µm) to mirror finish. In order to evaluate the characteristics of the grown BGO, we compared the properties of the grown BGO and those of the commercial BGO which was bought from AMCRYS and polished at both side on the crystal surfaces. An overview of all the crystals is shown in table 1.
  • In the gamma ray measurements, six different radioactive sources, 241Am, 133Ba, 57Co, 22Na, 137Cs and 54Mn, were used in order to measure the crystal’s radiation responses.
  • The surfaces of BGO crystal were optically polished to enable transmission measurements. The transmission and absorption spectra were measured using the CARY Eclipse fluorescence and CARY 300 Conc UV-visible spectrophotometer made by VARIAN. The ORTEC model 113 was used for preamplifier and model 572A for pulse shaping amplifier.

대상 데이터

  • This is to prevent decomposition of the melt and corrosion of the crucible [5]. The crucible is surrounded by a RF coil, zirconia and ceramic heat-insulating material, and they were placed in a double-walled watercooled stainless-steel chamber of 350 mm in diameter and 450 mm in length. The maximum temperature that can be reached up to 1800ºC with the furnace and the temperature is stabilized within ±0.
  • 5 mm/h. The starting materials used were 99.9995% pure bismuth germanium oxide powders. Pre-sintered BGO powder was melted in an inductively heated platinum crucible, 32 mm in diameter and 32 mm in length, under oxygen atmosphere.
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참고문헌 (8)

  1. Schmid F, Khattak CP, and Smith MB. Growth of bismuth germanate crystals by the heat exchanger method. J. Crystal Growth 1984;70:446-470 

  2. Murthy RVA, Ravikumar M, Choubey A, Lal K, Kharachenko L, Shleguel V, and Guerasimov V. Growth and characterization of large-size bismuth germinate single crystals by low thermal gradient Czochralski method. J. Crystal Growth 1999;197:865-873 

  3. Kozma P and Kozma P Jr. Radiation resistivity of BGO crystals due to low-energy gamma-rays. Nucl. Instr. and Meth. A 2003;501:499-504 

  4. Takagi K and Fukazawa T. Effect of growth conditions on the shape of $Bi_{4}Ge_{3}O_{12}$ single crystals and melt flow patterns. J. Crystal Growth 1986;76:328-338 

  5. Takagi K, Oi T, Fukazawa T, Ishii M and Akiyama S. Improvement in the scintillation conversion efficiency of $Bi_{4}Ge_{3}O_{12}$ single crystals. J. Crystal Growth 1981;52:584- 587 

  6. Vaithianathan V, Kumaragurubaran S, Santhanaraghavan P, Muralidhar N, Kumar R, Sinha AK, Ramasamy P and Nagarajan T, Growth and structural study of bismuth germinate single crystal and its energy resolution. Mater Chem Phys. 2002;74:121-125 

  7. Hu G, Wang S, Li Y, Xu L and Li P. The influence of temperature gradient on energy resolution of $Bi_{4}Ge_{3}O_{12}$ (BGO) crystal. Ceram. Int. 2004;30:1665-1668 

  8. DOH SH. Growth and Radiation Damage of BGO Single Crystals. 951-0202-050-1. KOSEF. 1996;1-10 

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