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참고문헌 (13)

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2. P. C. Chao, A. J. Tessmer, Kuang-Hann G. Duh, Pin Ho, Ming-Yih Kao, Phillip M. Smith, James M. Ballingall, S. M. J. Liu, and A. A. Jabra, "W-band low-noise InAlAs/InGaAs lattice-mat ched HEMT's," IEEE Electron Device Letters, Vol. 11, pp. 59-62, Jan 1990. 

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3. K. C. Hwang, P. Ho, M. Y. Kao, S. T. Fu, J. Liu, P. C. Chao, P. M. Smith, and A. W. Swanson, "W-band high power passivated 0.15 $\mu$ m InAlAs/InGaAs HEMT device," in Proc. Indium Phosphide and Related Materials, pp. 18-20, Mar 1994. 

4. K. H. G, Duh, S. M. J, Liu, M. Y. Kao, S. C. Wang, O. S. A. Tang, P. Ho, P. C. Chao, and P. M. Smith, "Advanced millimeter-wave InP HEMT MMIC's," in Proc. Indium Phosphide and Related Materials, pp. 493-496, 1993. 

5. J. W. Archer, R. Lai, "Ultra-Low-Noise InP-MMIC Amplifiers for 85-115 GHz," 2000 Asia-Pacific Microwave Conference, pp. 173-176, Dec 2000. 

6. K. C. Hwang, P. C. Cho, C. Creamer, K. B. Nichols, S. Wang, D. T. Kong, D. Dugas, and G. Patton, "Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMTs," IEEE Electron Device Letters, Vol. 20, No. 11, pp. 551-553, Nov 1999. 

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7. Arnulf Leuther, Rainer Weber, Michael Dammann, Michael Schlechtweg, Michael Mikulla, Martin Walther, Gunter Weimann, "Metamorphic 50 nm InAs-Channel HEMT," Int. Conf. Indium Phosphide and Related Materials, pp. 129-132, May 2005. 

8. Mikael Malmkvist, Anders Mellberg, and Jan Grahn, "A W-band MMIC amplifier using 70-nm gate length InP HEMT technology," in Proc, Gallium Arsenide & Other Semiconductor Application Symposium, pp. 165-168, Oct 2005. 

9. C. S. Whelan, W. E. Hoke, R. A. McTaggart, S. M. Lardizabal, P. S. Lyman, P. F. Marsh, and T. E. Kazior, "Low Noise $In_{0.32}(AlGa)_{0.68}As/In_{0.43}Ga_{0.57}As$ Metamorphic HEMT on GaAs Substrate with 850 mW/mm Output Power Density," IEEE Electron Device Letters, Vol. 21, No. 1, pp. 5-8, Jan 2000. 

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10. C. S. Whelan, P. F. Marsh, W. E. Hoke, R. A. McTaggart, C. P. McCarroll, and T. E. Kazior, "GaAs Metamorphic HEMT (MHEMT): An Attractive Alternative to InP HEMTs for High Performance Low Noise and Power Applications," in Proc. Indium Phosphide and Related Materials, pp. 337-340, May 2000. 

11. Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, and Do Manh Anh, "An Integrated Dual-band Low Noise Amplifier for GSM and Wireless LAN Applications," Int. Conf. System On Chip, pp. 67- 70, Sep 2003. 

12. Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, and Do Manh Anh, "An Integrated SiGe RF Bandpass Low Noise Amplifier for Multi-band Wireless Communication Applications," 2003 Asia-Pacific Conference, pp. 420-424, Sept 2003. 

13. Sungwon Kim, Yumin Koh, and Kwangseok Seo, "High performance 70 nm $In_{0.8}GaP/In_{0.4}AlAs/In_{0.35}$ GaAs Metamorphic HEMT With Pd Schottky Contacts," Int. Conf. Solid State Devices and Materials, pp. 520-521, 2007. 

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