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신뢰성응용연구 = Journal of the applied reliability, v.10 no.1 = no.29, 2010년, pp.65 - 71
Kim, Hyun-Joo (Dept. of Information Display, Hanyang University) , Kim, Kyeong-Rok (Dept. of Nanoscale Semiconductor Engineering, Hanyang University) , Kwack, Kae-Dal (Dept. of Information Display, Hanyang University)
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NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair...
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