Abstract

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

주제어

#IGZO   #Oxide transistor   #Nano-crystal   #Constant current stress  

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이 논문을 인용한 문헌 (1)

1. Lee, Se-Won ; Hwang, Yeong-Hyeon ; Cho, Won-Ju 2012. "Effect of SiO₂ Buffer Layer Thickness on the Device Reliability of the Amorphous InGaZnO Pseudo-MOS Field Effect Transistor" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, 25(1): 24~28  원문보기 상세보기