최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기International journal of precision engineering and manufacturing, v.13 no.1, 2012년, pp.25 - 31
Lee, Hyun-Seop (Department of Mechanical Engineering, University of California) , Guo, Yong-Chang (Graduate School of Mechanical Engineering, Pusan National University) , Jeong, Hae-Do (Graduate School of Mechanical Engineering, Pusan National University)
Heat generation is inevitable during the chemical mechanical planarization (CMP) process because the mechanical and chemical removal of material is carried out by using abrasives and chemicals in the CMP slurry. In this paper, results obtained from experiments performed on a membrane-type carrier ha...
Int. J. Mach. Tools Manuf. H. Hocheng 40 11 1651 2000 10.1016/S0890-6955(00)00013-4 Hocheng, H., Tsai, H. Y. and Tsai, M. S., “Effects of kinematic variables on nonuniformity in chemical mechanical planarization,” Int. J. Mach. Tools Manuf., Vol. 40, No. 11, pp. 1651-1669, 2000.
Wear Y. Zhao 252 3-4 220 2002 10.1016/S0043-1648(01)00871-7 Zhao, Y. and Chang, L., “A micro-contact and wear model for chemical-mechanical polishing of silicon wafers,” Wear, Vol. 252, No. 3-4, pp. 220-226, 2002.
J. Mater. Proc. Technol. H. S. Lee 209 20 6134 2009 10.1016/j.jmatprotec.2009.05.027 Lee, H. S., Joo, S. B. and Jeong, H. D., “Mechanical effect of colloidal silica in copper chemical mechanical planarization,” J. Mater. Proc. Technol., Vol. 209, No. 20, pp. 6134-6139, 2009.
Microelectron. Eng. H. S. Lee 85 4 689 2008 10.1016/j.mee.2007.12.044 Lee, H. S., Park, B. Y. and Jeong, H. D., “Influence of slurry components on uniformity in copper chemical mechanical planarization,” Microelectron. Eng., Vol. 85, No. 4, pp. 689-696, 2008.
J. Mater. Proc. Technol. H. S. Lee 209 4 1729 2009 10.1016/j.jmatprotec.2008.04.021 Lee, H. S., Park, B. Y. and Jeong, H. D., “Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarization,” J. Mater. Proc. Technol., Vol. 209, No. 4, pp. 1729-1735, 2009.
J. Mater. Proc. Technol. H. J. Kim 130-131 334 2002 10.1016/S0924-0136(02)00820-8 Kim, H. J., Kim, H. Y., Jeong, H. D., Lee, E. S. and Shin, Y. J., “Friction and thermal phenomena in chemical mechanical polishing,” J. Mater. Proc. Technol., Vol. 130-131, pp. 334-338, 2002.
J. Mater. Proc. Technol. D. H. Kwon 178 1-3 82 2006 10.1016/j.jmatprotec.2005.11.025 Kwon, D. H., Kim, H. J. and Jeong, H. D., “Heat and its effects to chemical mechanical polishing,” J. Mater. Proc. Technol., Vol. 178, No. 1-3, pp. 82-87, 2006.
J. Electrochem. Soc. Y. A. Sampurno 152 7 G537 2005 10.1149/1.1925070 Sampurno, Y. A., Borucki, L., Zhuang, Y., Boning, D. and Philipossian, A., “A method for direct measurement of substrate temperature during copper CMP,” J. Electrochem. Soc., Vol. 152, No. 7, pp. G537-G541, 2005.
J. Vac. Sci. Technol. B V. R. Kakireddy 26 1 141 2008 10.1116/1.2825143 Kakireddy, V. R., Mudhivarthi, S. and Kumar, A., “Effect of temperature on copper damascene chemical mechanical polishing process,” J. Vac. Sci. Technol. B, Vol. 26, No. 1, pp. 141-150, 2008.
Japanese Journal of Applied Physics F. Sugimoto 34 12A 6314 1995 10.1143/JJAP.34.6314 Sugimoto, F., Arimoto, Y. and Ito, T., “Simultaneous temperature measurement of wafers in chemical mechanical polishing of silicon dioxide layer,” Japanese Journal of Applied Physics, Vol. 34, No. 12A, pp. 6314-6320, 1995.
J. Electrochem. Soc. H. Hocheng 146 11 4236 1999 10.1149/1.1392620 Hocheng, H., Huang, Y. L. and Chen, L. J., “Kinematic Analysis and Measurement of Temperature Rise on a Pad in Chemical Mechanical Planarization,” J. Electrochem. Soc., Vol. 146, No. 11, pp. 4236-4239, 1999.
J. Electrochem. Soc. D. White 150 4 G271 2003 10.1149/1.1560642 White, D., Melvin, J. and Boning, D., “Characterization and modeling of Dynamic Thermal Behavior in CMP,” J. Electrochem. Soc., Vol. 150, No. 4, pp. G271-G278, 2003.
Microelectron. Eng. S. Oh 85 11 2191 2008 10.1016/j.mee.2008.04.037 Oh, S. and Seok, J., “Modeling of chemical-mechanical polishing considering thermal coupling effects,” Microelectron. Eng., Vol. 85, No. 11, pp. 2191-2201, 2008.
J. Electron. Mater. H. J. Kim 33 1 53 2004 10.1007/s11664-004-0294-4 Kim, H. J. and Jeong, H. D., “Effect of Process Conditions on Uniformity of Velocity and Wear Distance of Pad and Wafer during Chemical Mechanical Planarization,” J. Electron. Mater., Vol. 33, No. 1, pp. 53-60, 2004.
Japanese Journal of Applied Physics B. Y. Park 47 12 8771 2008 10.1143/JJAP.47.8771 Park, B. Y., Lee, H. S., Kim, Y. J., Kim, H. J. and Jeong, H. D., “Effect of process parameters on friction force and material removal in oxide chemical mechanical polishing,” Japanese Journal of Applied Physics, Vol. 47, No. 12, pp. 8771-8778, 2008.
Tribology International H. Liang 38 3 235 2005 10.1016/j.triboint.2004.08.006 Liang, H., “Chemical boundary lubrication in chemicalmechanical planarization,” Tribology International, Vol. 38, No. 3, pp. 235-242, 2005.
Key Eng. Mater. H. S. Lee 339 152 2007 10.4028/www.scientific.net/KEM.339.152 Lee, H. S., Park, B. Y., Park, S. M., Kim, H. J. and Jeong, H. D., “The Characteristics of Frictional Behavior in CMP Using An Integrated Monitoring System,” Key Eng. Mater., Vol. 339, pp. 152-157, 2007.
Electrochem. Solid-State Lett. X. Wei 13 11 H391 2010 10.1149/1.3483752 Wei, X., Zhuang, Y., Sampurno, Y., Sudargho, F., Wargo, C., Borucki, L. and Philipossian, A., “Tribological, Thermal, and Wear Characteristics of Poly (phenylene sulfide) and Polyetheretherketone Retaining Rings in Interlayer Dielectric CMP,” Electrochem. Solid-State Lett., Vol. 13, No. 11, pp. H391-H395, 2010.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.