[논문]Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells

Park, Jin-Joo; Kim, Young-Kuk; Lee, Sun-Wha; Lee, Youn-Jung; Yi, Jun-Sin; Hussain, Shahzada Qamar; Balaji, Nagarajan

doi:10.4313/teem.2012.13.4.192

[국내논문] Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells 원문보기

Transactions on electrical and electronic materials, v.13 no.4, 2012년, pp.192 - 195

Park, Jin-Joo (School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University) , Kim, Young-Kuk (School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University) , Lee, Sun-Wha (School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University) , Lee, Youn-Jung (School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University) , Yi, Jun-Sin (School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University) , Hussain, Shahzada Qamar (Department of Energy Science, Sungkyunkwan University) , Balaji, Nagarajan (Department of Energy Science, Sungkyunkwan University)

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We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

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There is an increase in σ_d, σ_ph and Ea with increasing both the B₂H₆and N₂O ratio. Here, we selected two p-type a-SiO_x:H films with good optical bandgap, dark conductivity and activation energy for the applications regarding a-Si solar cells. We employed these two p-type a-SiO_x:H films for the a-Si silicon solar cell.

참고문헌 (15)

K. Yoon, Y. Kim, J. Park, C. H. Shin, S. Baek, J. Jang, S. M. Iftiquar, J. Yi, Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell, J. of Non-Cryst. Solids 357 (2011) 2826-2832.

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A. Sarker, A. K. Barua, Development of high quilty p-type hydrogenated amorphous silicon oxide film and its use in improving the performance of single junction amorphous silicon solar cells, Jpn. J. Appl. Phys. 41 (2002) 765-769.

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J. Sritharathikhun, F. Jiang, S. Miyajima, A. Yamada, and M. Konagai, Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells, Jap. J. of Appl. Phys. 48 (2009) 101603 - 101603(5).

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A. Sarker and A. K. Barua, Development of High Quality P-Type Hydrogenated Amorphous Silicon Oxide Film and Its Use in Improving the Performance of Single Junction Amorphous Silicon Solar Cells, Jpn. J. Appl. Phys. 41 (2002) 765-769.

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M. R. Yang, K. S. Chen, S. T. Hsu, T. A. Wu, Fabrication and characteristics of SiOx films by plasma chemical vapor deposition of tetramethylorthosilicate, Surf. Coat. Technol. 123 (2000) 204-209.

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G. Lucovsky, J. Yang, S.S. Chao, J.E. Tyler, W. Czubatyj, Oxygenbonding environments in glow-deposited amorphous siliconhydrogen alloy films, Phys. Rev. B 28 (1983) 3225-3233.

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A. Janotta, R. Janssen, M. Schmidt, T. Graf, M. Stutzmann, L. Gorgens, A. Bergmaier, G. Dollinger, C. Hammerl, S. Schreiber, B. Stritzker, Doping and its efficiency in $\alpha$ - $SiO_{x}$ :H, Phys. Rev. B 69 (2004) 115206-1-16.

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M. Isomura, T. Kinoshita, S. Tsuda, Boron-compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities, Appl. Phys. Lett. 68 (1996) 1201-1203.

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I. Wagner, H. Stasiewski, B. Abeles, W.A. Landford, Surface states in P- and B-doped amorphous hydrogenated silicon, Phys. Rev. B 28 (1983) 7080-7086.

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D. Das, S. M. Iftiquar, A.K. Barua, Wide optical-gap a-SiO:H films prepared by rf glow discharge, J. Non-Cryst. Solids 210 (1997) 148-154.

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R. Carius, R. Fischer, E. Holzenkampfer, J. Stuke, Photoluminescence in the amorphous system $SiO_{x}$ , J. Appl. Phys. 52 (1981), 4241-4243.

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I. Umezu. K. Miyamoto, N. Sakamoto, K. Maeda, Optical bond gap and Tauc gap in a- $SiO_{x}$ :H and a-SiNx:H films, Jpn. J. Appl. Phys. 34 (1995) 1753-1758.

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A. Hadjadj, P. St'ahel, P. R. i Cabarrocas, V. Paret, Y. Bounouh, J. C. Martin, Optimum doping level in a-Si:H and a-SiC:H materials, J. Appl. Phys. 83 (1998) 830- 836.

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T. Jana, S. Ghosh, S. Ray, Silicon oxide thin films prepared by a photo-chemical vapor deposition technique, J. Mater. Sci. 32 (1997) 4895-4900.
A.V. Shah, M. Vanecek, J. Meier, F. Meillaud, J. Guillet, D. Fischer, C. Droz, X. Niquille, S. Fay, E. Vallat-Sauvain, V. Terrazzoni- Daudrix, J. Bailat, Basic efficiency limits, recent experimental results and novel light-trapping schemes in a-Si:H, $\mu c$ -Si:H and 'micromorph tandem' solar cells, J. Non-Cryst. Solids 338-340 (2004) 639-645.

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[국내논문] Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells 원문보기

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[국내논문] Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells 원문보기

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