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NTIS 바로가기Journal of semiconductor technology and science, v.13 no.6, 2013년, pp.622 - 634
Kumari, Vandana (Semiconductor Device Research Laboratory, Department of Electronics Science, University of Delhi) , Saxena, Manoj (Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi) , Gupta, R.S. (Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology) , Gupta, Mridula (Semiconductor Device Research Laboratory, Department of Electronics Science, University of Delhi)
The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be obse...
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V. Kumari, M. Saxena, R. S. Gupta, and M. Gupta, "Temperature dependent drain current model for Gate stack Insulated Shallow extension silicon On Nothing MOSFET for wide range of operating temperatures," Microelectronics Reliability, Vol. 52, no. 6, pp. 974-983, 2012.
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