In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mT...
In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.
In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.
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가설 설정
/Ar(20:80%) can be explained as follows; 1) N can be effectively removed by formation of volatile etch byproduct N-F. 2) The byproduct can accumulate on the TiN surface.
The byproduct prevents further chemical reaction between the CF or F radical and the TiN layer. 3) The byproduct can be removed by Ar ion sputtering. The low etch rate in pure CF4 plasma is related to the formation of byproduct.
제안 방법
/Ar plasma. Experiments were performed with variations of CF4/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. It was found that addition of CF4 contents up to 20% led to the etch rate of TiN decreasing, in comparison with at CF4 only.
The gas mixing ratio and process pressure were varied, to find the characteristics of etching. For these experiments, RF power, DC-bias voltage, process pressure and substrate temperature were 700 W, - 150 V, 15 mTorr and 45℃, respectively. In addition, plasma etching of TiN thin films was investigated by including the RF power, DC-bias voltage, and process pressure of 500 W ~ 650 W, - 150 V ~ - 300 V, and 9 ~ 20 mTorr in the CF4/Ar gas mixing ratio, respectively.
For more detailed investigations of the chemical reaction between TiN and fluorine atoms, XPS analysis was performed. In order to determine this in detail, XPS narrow scan analysis was performed as a function of CF4 content in CF4/Ar plasma. Figure 5 shows narrow scan spectra for Ti 2p from TiN surfaces.
In this work, we investigated etching characteristics of TiN to SiO2, using an inductively coupled plasma (ICP) system. Etching characteristics were investigated in terms of TiN thin film, and selectivity of TiN thin film over SiO2 as a function of the etch chemistry.
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