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NTIS 바로가기Transactions on electrical and electronic materials, v.14 no.3, 2013년, pp.139 - 142
Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University) , Oh, Jae-Sub (Department of Electronics Engineering, Chungnam National University) , Yun, Ho-Jin (Department of Electronics Engineering, Chungnam National University) , Jeong, Kwang-Seok (Department of Electronics Engineering, Chungnam National University) , Kim, Yu-Mi (Department of Electronics Engineering, Chungnam National University) , Lee, Sang Youl (Department of Electronics Engineering, Chungnam National University) , Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University) , Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
Silicon nanowire (SiNW) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices were fabricated and their electrical characteristics were analyzed. Compared to planar SONOS devices, these SiNW SONOS devices have good program/erase (P/E) characteristics and a large threshold voltage (
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