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NTIS 바로가기Journal of electrical engineering & technology, v.8 no.6, 2013년, pp.1481 - 1486
Samuel, T.S.Arun (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Balamurugan, N.B. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Sibitha, S. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Saranya, R. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Vanisri, D. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering)
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions...
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