제안 방법

• In this study, the leakiest current path mainly formed along the regions of relatively lower workfunction values or “lucky-channel” between the source and the drain in the HK/MG MOSFETs will be reconfigured using the Monte Carlo (MC) simulation.
• For the metal-gate in 28-nm low-power MOSFETs [3], the mixed-mode TCAD [4] simulation of the reconfigured matrix as well as the non-reconfigured matrix with parallel-connected rows, was performed to physically understand the WFV-induced V_TH variation and lowering observed in the experimental data. The mixed-mode TCAD simulation is used to test a function or characteristic of the circuit that is connected with two (or more) devices, when the set of the device parameters are not precisely characterized in the library of the COMPACT model.
• 4, the limited number of MC simulation runs with the non-reconfigured gate matrix would be too optimistic in evaluating the WFV-induced V_TH variation. Either a significantly large number of samples or the samples reconfigured by the simple matrix models suggested in this work should be considered in estimating the WFV-induced V_TH variation because some of the fabricated devices with the lucky channel would significantly lower the mean of the V_TH distribution as well as increase the standard deviation. Therefore, in estimating the WFV-induced V_TH variation, MC simulation with statistically-significant number (> ~10⁶) of samples should be performed.