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NTIS 바로가기Journal of electrical engineering & technology, v.9 no.4, 2014년, pp.1355 - 1359
Dhanaselvam, P. Suveetha (Dept. of Electronics and Communication Engineering, Velammal College of Engg & Technology) , Balamurugan, N.B. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Chakaravarthi, G.C. Vivek (Dept. of Electronics and Communication Engineering, Velammal College of Engg & Technology) , Ramesh, R.P. (Dept. of Electronics and Communication Engineering, Velammal College of Engg & Technology) , Kumar, B.R. Sathish (Dept. of Electronics and Communication Engineering, Velammal College of Engg & Technology)
In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided w...
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J Hsin-Kai Wang, Sean Wu1_, Te-Kuang Chiang 2, and Maw-Shung Lee. "A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide- Semiconductor Field-Effect Transistors", Japanese Journal Of Applied Physics 51 (2012).
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