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NTIS 바로가기공업화학 = Applied chemistry for engineering, v.26 no.6, 2015년, pp.746 - 752
This study investigates the effects of aspect ratio (transport length-to-width) on diffusive-convection for physical vapor transport processes of
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N. B. Singh, M. Gottlieb, G. B. Brandt, A. M. Stewart, R. Mazelsky, and M. E. Glicksman, Growth and characterization of mercurous halide crystals: mercurous bromide system, J. Crystal Growth, 137, 155-160 (1994).
N. B. Singh, R. H. Hopkins, R. Mazelsky, and J. J. Conroy, Purification and growth of mercurous chloride single crystals, J. Crystal Growth, 75, 173-180 (1986).
S. J. Yosim and S. W. Mayer, The mercury-mercuric chloride system, J. Phys. Chem., 64, 909-911 (1960).
T. Yamaguchi, K. Ohtomo, S. Sato, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, and T. Yano, Surface morphology and step instability on the (0001)C facet of physical vapor transport-grown 4H-SiC single crystal boules, J. Crystal Growth, 431, 24-31 (2015).
C. Ohshige, T. Takahashi, N. Ohtani, M. Katsuno, T. Fujimoto, S. Sato, H. Tsuge, T. Yano, H. Matsuhata, and M. Kitabatake, Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the (1120) direction, J. Crystal Growth, 408, 1-6 (2014).
J. G. Kim, J. H. Jeong, Y. Kim, Y. Makarov, and D. J. Choi, Evaluation of the change in properties caused by axial and radial Temperature gradients in silicon carbide crystal growth using the physical vapor transport method, Acta. Materialia, 77, 54-59 (2014).
Y. Shi, J. Yang, H. Liu, P. Dai, B. Liu, Z. Jin, and G. Qiao, Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique, J. Crystal Growth, 349, 68-74 (2012).
M. A. Fanton, Q. Li, A. Y. Polyakov, and M. Skowronski, Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method, J. Crystal Growth, 300, 314-318 (2007).
K. Semmelroth, M. Krieger, G. Pensl, H. Nagasawa, R. Pusche, M. Hundhausen, L. Ley, M. Nerding, and H. P. Strunk, Growth of cubic SiC single crystals by the physical vapor transport technique, J. Crystal Growth, 308, 241-246 (2007).
E. R. Letts, J. S. Speck, and S. Nakamura, Effect of indium on the physical vapor transport growth of AIN, J. Crystal Growth, 311, 1060-1064 (2009).
J. T. Mullins, F. Dierre, and B. K. Tanner, X-ray diffraction imaging of ZnTe Crystals grown by the multi-tube physical vapour transport technique, J. Crystal Growth, 431, 61-68 (2015).
L. Hongtao, S. Wenbin, M. Jiahua, and Z. Feng, Purification of $Cd_{0.9}Zn_{0.1}Te$ by physical vapor transport method, Mater. Lett., 59, 3837-3840 (2005).
H. Cai, W. Wang, P. Liu, G. Wang, A. Liu, Z. He, Z. Cheng, S. Zhang, and M. Xia, Enhanced synthesis of Sn nanowires with aid of Se atom via physical vapor transport, J. Crystal Growth, 420, 42-46 (2015).
S. Jo, S. Suzuki, and M. Yoshimura, Effect of solid-state polymerization on crystal morphology of a type of polydiacetylene single crystal obtained by physical vapor transport technique," Thin Solid Films, 554, 154-157 (2014).
S. Collins, S. Vatavu, V. Evani, M. Khan, S. Bakhshi, V. Palekis, C. Rotaru, and C. Ferekides, Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport, Thin Solid Films, 582, 139-145 (2015).
S. Y. Hung, R. L. Kao, K. Y. Lin, C. C. Yang, K. S. Lin, Y. C. Chao, J. S. Wang, J. L. Shen, and K. C. Chiu, Characterization of facial and meridional $Alq_3$ thin films fabricated from physical vapor transport at high substrate temperatures, Mater. Chem. Phys., 154, 100-106 (2015).
A. Choubey, P. Veeramani, A. T. G. Pym, J. T. Mullins, P. J. Sellin, A. W. Brinkman, I. Radley, A. Basu, and B. K. Tanner, Growth by the Multi-tube Physical Vapour Transport Method and Characterization of Bulk (Cd, Zn)Te, J. Crystal Growth, 352, 120-123 (2012).
Y. Shi, J. F. Yang, H. Liu, P. Dai, B. Liu, Z. Jin, G. Qiao, and H. Li, Fabrication and Mechanism of 6H-type Silicon Carbide Whiskers by Physical Vapor Transport Technique, J. Crystal Growth, 349, 68-74 (2012).
N. Zotov, S. Baumann, W. A. Meulenberg, and R. Vassen, La-Sr-Fe-Co Oxygen Transport Membranes on Metal Supports Deposited by Low Pressure Plasma Spraying-Physical Vapour Deposition, J. Membrane Sci., 442, 119-123 (2013).
M. A. Fanton, Q. Li, A. Y. Polyakov, M. Skowronski, R. Cavalero, and R. Ray, Effects of Hydrogen on the Properties of SiC Crystals Grown by Physical Vapor Transport: Thermodynamic Considerations and Experimental Results, J. Crystal Growth, 287, 339-343 (2006).
C. H. Su, M. A. George, W. Palosz, S. Feth, and S. L. Lehoczky, Contactless Growth of ZnSe Single Crystals by Physical Vapor Transport, J. Crystal Growth, 213, 267-275 (2000).
C. Paorici, C. Razzetti, M. Zha, L. Zanotti, L. Carotenuto, and M. Ceglia, Physical Vapour Transport of Urotropine: One-Dimensional Model, Mater. Chem. and Phys., 66, 132-137 (2000).
A. Nadarajah, F. Rosenberger, and J. Alexander, Effects of buoyancy- driven flow and thermal boundary conditions on physical vapor transport, J. Crystal Growth, 118, 49-59 (1992).
F. Rosenberger, J. Ouazzani, I. Viohl, and N. Buchan, Physical vapor transport revised, J. Crystal Growth, 171, 270-287 (1997).
P. A. Tebbe, S. K. Loyalka, and W. M. B. Duval, Finite element modeling of asymmetric and transient flowfields during physical vapor transport, Finite Elem. Anal. Des., 40, 1499-1519 (2004).
M. Alsaady, R. Fu, B. Li, R. Boukhanouf, and Y. Yan, Thermo-physical properties and thermo-magnetic convection of ferrofluid, Appl. Therm. Eng., 88, 14-21 (2015).
T. Qin, Z. Tukovic, and R. O. Grigoriev, Buoyancy-thermocapillary convection of volatile fluids under their vapors, Int. J. Heat Mass Transfer, 80, 38-49 (2015).
F. Rosenberger and G. Muller, Interfacial transport in crystal growth, a parameter comparison of convective effects, J. Crystal Growth, 65, 91-104 (1983).
S. V. Patankar, Numerical Heat Transfer and Fluid Flow, Hemisphere Publishing Corp., Washington D. C., (1980).
B. S. Jhaveri and F. Rosenberger, Expansive Convection in Vapor Transport across Horizontal Enclosures, J. Crystal Growth, 57, 57-64 (1982).
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