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Journal of semiconductor technology and science, v.16 no.1, 2016년, pp.39 - 43
Shim, Bo-Hyun (Daegu Center, Defense Agency for Technology and Quality) , Jo, Hee-Jin (Department of Analysis Assessment, Defense Agency for Technology and Quality) , Kim, Dong-Jin (Daegu Center, Defense Agency for Technology and Quality) , Chae, Jong-Mok (Daegu Center, Defense Agency for Technology and Quality)
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The structural, electrical properties of Ga doped MgZnO transparent conductive oxide (TCO) films by ratio-frequency(RF) magnetron sputtering were investigated. Ga doped MgZnO TCO films were deposited on the sapphire substrates at
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