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NTIS 바로가기Journal of semiconductor technology and science, v.16 no.2, 2016년, pp.204 - 209
Yoo, Sung-Won (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University) , Kim, Hyunsuk (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University) , Kang, Myounggon (Korea National University of Transportation, Department of Electronics Engineering) , Shin, Hyungcheol (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University)
The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigat...
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Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, and Ken Uchida, "Self-Heating Effects and Analog Performance Optimization of Fin-type Field-Effect Transistors", Japanese Journal of Applied Physics, vol, 52, no.4, pp. CC031-CC037, 2013.
Tsunaki Takahashi, Shunri Oda, and Ken Uchida, "Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires", Japanese Journal of Applied Physics, vol, 52, pp. 42031-42037, 2013.
Tsunaki Takahashi, Nobuyasu Beppu, Kunro Chen, Shunri Oda, and Ken Uchida, "Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability", IEEE International Electron Device Meeting, pp. 809-812, 2011.
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