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Development of High Frequency pMUT Based on Sputtered PZT 원문보기

Journal of electrical engineering & technology, v.13 no.6, 2018년, pp.2434 - 2440  

Lim, Un-Hyun (Dept. of Electrical and Computer Engineering, Ajou University) ,  Yoo, Jin-Hee (Dept. of Electrical and Computer Engineering, Ajou University) ,  Kondalkar, Vijay (Dept. of Electrical and Computer Engineering, Ajou University) ,  Lee, Keekeun (Dept. of Electrical and Computer Engineering, Ajou University)

Abstract AI-Helper 아이콘AI-Helper

A new type of piezoelectric micromachined ultrasonic transducer (pMUT) with high resonant frequency was developed by using a thin lead zirconate titanate (PZT) as an insulation layer on a floating $10{\mu}m$ silicon membrane. The PZT insulation layer facilitated acoustic impedance matchin...

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제안 방법

  • A COMSOL simulation was performed to predict the resonant frequency of our designed structure and the ultrasonic propagation into the air. For the FEM simulation, the acoustic-piezoelectric interaction and frequency material system were employed in the COMSOL Multiphysics.
  • Two different devices with SiO2 and PZT insulation layer were experimentally fabricated in this paper and then their results were compared and analyzed. Furthermore, the resonant frequencies in terms of the radius of the piezoelectric element were checked, and the ultrasonic transmissions were analyzed by connecting two identical devices to two separate ports in a single network analyzer simultaneously.
  • Above all, PZT has face center cubic (FCC) based unit cell, the same as the used metal, so that a stress effect caused by lattice mismatching between layers is minimized. Two different devices with SiO2 and PZT insulation layer were experimentally fabricated in this paper and then their results were compared and analyzed. Furthermore, the resonant frequencies in terms of the radius of the piezoelectric element were checked, and the ultrasonic transmissions were analyzed by connecting two identical devices to two separate ports in a single network analyzer simultaneously.

대상 데이터

  • 5 shows the top, cross-sectional, and bottom views of the fabricated device. The device was circular and well-patterned, and the diameter of the circular was ~1 mm. As shown in Fig.

이론/모형

  • A COMSOL simulation was performed to predict the resonant frequency of our designed structure and the ultrasonic propagation into the air. For the FEM simulation, the acoustic-piezoelectric interaction and frequency material system were employed in the COMSOL Multiphysics. The boundary medium was set to air to check the amount of energy propagated into the air.
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참고문헌 (21)

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  10. T. Haccart, E. Cattan, and D. Remiens, "Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation Semiconductor Physics," Quantum Electronics & Optoelectronics, vol. 5, pp. 78-88, 2002. 

  11. L. Gabriel, J. Pulskamp, L. Sanchez, D. Potrepka, R. Proie, T. Ivanov, R. Rudy, W. Nothwang, S. Bedair, C. Meyer, and R. Polcawich, "PZT-Based Piezoelectric MEMS Technology," J. Am. Ceram. Soc., vol. 95, pp. 1777-1792, 2012. 

  12. P. Muralt, N. Ledermann, J. Baborowski, A. Barzegar, S. Gentil, B. Belgacem, S. Petitgrand, A. Bosseboeuf, and N. Setter, "Piezoelectric micromachined ultrasonic transducers based on PZT thin films," IEEE Trans. Ultrason. Ferroelect. Freq. Contr., vol. 52, pp. 2276-2288, Dec. 2005. 

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  14. H. Lobl, M. Klee, R. Milsom, R. Dekker, C. Metzmacher, W. Brand, and P. Lok, "Materials for bulk acoustic wave (BAW) resonators and filters," J. Eur. Ceram. Soc., vol. 21, pp. 2633-2640, 2001. 

  15. G. Velu, D. Remiens, and B. Thierry, "Ferroelectric Properties of PZT Thin Films Prepared by Sputtering with Stoichiometric Single Oxide Target: Comparison Between Conventional and Rapid Thermal Annealing," J. Eur. Ceram. Soc., vol. 17, pp. 1749-1755, Feb. 1997. 

  16. P. Muralt, A. Kholkin, M. Kohli, and T. Maeder, "Piezoelectric actuation of PZT thin-film diaphragms at static and resonant Conditions," Sens. Actuators A, vol. 53, pp. 398-404, 1996. 

  17. I. Kanno, S. hayashi, T. Kamada, M. Kitagawa, and T. Hirao, "Low Temperature Preparation of Pb(Zr, Ti) $O_3$ Thin Films on (Pb, La) $TiO_3$ Buffer Layer by Multi-Ion-Beam Sputtering," Jpn. J. Appl. Phys., vol. 32, pp. 4057-4060, Sept. 1993. 

  18. W. Zhahg, K. Sasaki, and T. Hata, "Low-Temperature Fabrication of Pb(Zr, Ti) $O_3$ Films by RF Reactive Sputtering Using Zr/Ti + PbO Target," Jpn. J. Appl. Phys., vol. 34, pp. 5120-5123, Sept. 1995. 

  19. D. Minh, N. Loi, N. Duc, and B. Trinh, "Lowtemperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates," Journal of Science: Advanced Materials and Devices, vol. 1, pp. 75-79, Apr. 2016. 

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  21. S. Kim, H. Park, S. Kim, H. Wikle, J. Park, and D. Kim, "Comparison of MEMS PZT Cantilevers Based on d31 and d33 Modes for Vibration Energy Harvesting," J. Micromech. Microeng., vol. 22, pp. 26-33, Feb. 2013. 

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