참고문헌 (17)

1. TeraView, "Teraherts Equipment," http://www.teraview.com/products/TeraPulse%204000/index.html 

2. Terasense, http://terasense.com/ 

3. C.M. Armstrong, "The Truth about Terahertz," IEEE Spectrum, vol. 49, no. 9, Sept. 2012, pp. 36-41. 

   상세보기

4. R.L. Schmid et al., "A Comparison of the Degradation in RF Performance due to Device Interconnects in Advanced SiGe HBT and CMOS Technologies," IEEE Trans. Electron Devices, vol. 62, no. 6, June 2015, pp. 1803-1810. 

   상세보기

5. M. Adnan and E. Afshari, "A 247-to-263.5 GHz VCO with 2.6mW Peak Output Power and 1.14% DC-to-RF Efficiency in 65nm Bulk CMOS," IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, San Francisco, CA, USA, Feb. 2014, pp. 262-263. 

6. H. Koo et al., "Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO with High Efficiency and Wide Tuning Range," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 62, no. 7, July 2015, pp. 1883-1893. 

   상세보기

7. P.Y. Chinag et al., "A Silicon-Based 0.3 THz Frequency Synthesizer with Wide Locking Range," IEEE J. Solid State Circuits, vol. 49, no. 12, Dec. 2014, pp. 2951-2963. 

   상세보기

8. C. Jiang et al., "An Efficient 210 GHz Compact Harmonic Oscillator with 1.4 dBm Peak Output Power and 10.6% Tuning Range," IEEE Radio Freq. Integr. Circuits Symp. (RFIC), San Francisco, CA, USA, May 2016, pp. 194-197. 

9. J. Zhang et al., "85-to-127 GHz CMOS Signal Generation Using a Quadrature VCO with Passive Coupling and Broadband Harmonic Combining for Rotational Spectroscopy," IEEE J. Solid State Circuits, vol. 50, no. 6, June 2015, pp. 1361-1371. 

   상세보기

10. Y. Tousi and E. Afshari, "A High-Power and Scalable 2-D Phased Array for Terahertz CMOS Integrated Systems," IEEE J. Solid State Circuits, vol. 50, no. 2, Feb. 2015, pp. 597-609. 

    상세보기

11. K. Schmalz et al., "245 GHz SiGe Transmitter for Gas Spectroscopy," IEEE Compound Semicond. Integr. Circuit Symp., La Jolla, CA, USA, Oct. 2014, pp. 1-4. 

12. X. Mei et al., "First Demonstration of Amplification at 1 THz using 25-nm InP High Electron Mobility Transistor Process," IEEE Electron Device Lett., vol. 36, no. 4, Apr. 2015, pp. 327-329. 

    상세보기

13. Z. Griffith et al., "A 23.2 dBm at 210 GHz to 21.0dBm at 235 GHz 16-Way PA-cell combined InP HBT SSPA," IEEE Compound Semicond. Integr. Circuit Symp., La Jolla, CA, USA, Oct. 2014, pp. 1-4. 

14. M. Urteaga et al., "InP HBT Technologies for THz Integrated Circuits," Proc. IEEE, vol. 105, no. 6, May 2017, pp. 1051-1067. 

    상세보기

15. K. Leong et al., "850 GHz Receiver and Transmitter Front-Ends Using InP HEMT," IEEE Trans. THz Sci. Technol., vol. 7, no. 4, July 2017, pp. 466-475. 

    상세보기

16. H. Sugiyama et al., "Room-Temperature Resonant-Tunneling-Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology," NTT Technical Rev., vol. 9, no. 10, Oct. 2011, pp. 1-6. 

17. R. Izumi et al., "1.98 THz Resonant-Tunneling-Diode Oscillator with Reduced Conduction Loss by Thick Antenna Electrode," Int. Conf. Infrared, Millimeter, Terahertz Waves (IRMMW-THz), Cancun, Mexico, Aug. 2017, pp. 1-2.