[논문]Laser-induced Damage to Polysilicon Microbridge Component

Zhou, Bing; He, Xuan; Li, Bingxuan; Liu, Hexiong; Peng, Kaifei

doi:10.3807/copp.2019.3.6.502

Laser-induced Damage to Polysilicon Microbridge Component 원문보기

Current optics and photonics, v.3 no.6, 2019년, pp.502 - 509

Zhou, Bing (Department of Opto-electronics Engineering, Army Engineering University) , He, Xuan (Department of Opto-electronics Engineering, Army Engineering University) , Li, Bingxuan (Department of Opto-electronics Engineering, Army Engineering University) , Liu, Hexiong (Department of Opto-electronics Engineering, Army Engineering University) , Peng, Kaifei (Department of Opto-electronics Engineering, Army Engineering University)

Abstract ▼ AI-Helper

Based on the typical pixel structure and parameters of a polysilicon uncooled bolometer, the absorption rate of a polysilicon microbridge infrared detector for 10.6 ㎛ laser energy was calculated through the optical admittance method, and the thermal coupling model of a polysilicon microbridge component irradiated by far infrared laser was established based on theoretical formulas. Then a numerical simulation study was carried out by means of finite element analysis for the actual working environment. It was found that the maximum temperature and maximum stress of the microbridge component are approximately exponentially changing with the laser power of the irradiation respectively and that they increase monotonically. The highest temperature zone of the model is gradually spread by the two corners of the bridge surface that are not connected to the bridge legs, and the maximum stress acts on both sides of the junction of the microbridge legs and the substrate. The mechanism of laser-induced hard damage to polysilicon detectors is the melting damage caused by high temperature. This paper lays the foundation for the subsequent study of the interference mechanism of the laser on working state polysilicon detectors.

주제어

표/그림 (20)

그림 FIG. 1. Pixel structures of uncooled microbolometers.
그림 FIG. 2. A typical microbridge structure.
그림 FIG. 3. 3D model.
그림 FIG. 4. Etched polysilicon membrane.
그림 FIG. 5. Heat capacity cp and thermal conductance k of Si.
그림 FIG. 6. Structural constraint (A) and temperature constraint (B).
표 TABLE 1. Heat capacity, thermal conductance and thermal expansion coefficient of Si
표 TABLE 2. Part of mechanical and thermal-physical properties of polysilicon
그림 FIG. 7. Relationship between maximum temperature and laser power.
그림 FIG. 8. Relationship between maximum stress and laser power.
표 TABLE 3. Thermal load and corresponding results
그림 FIG. 9. Temperature distribution at 7 ms.
그림 FIG. 10. Temperature distribution in steady state.
그림 FIG. 11. Stress distribution in steady state.
그림 FIG. 12. Stress distribution inside the bridge deck and bridge connecting beam.
그림 FIG. 13. Stress distribution of the bridge beam connecting the bridge leg to the substrate.
그림 FIG. 14. Temperature curve.
그림 FIG. 15. Stress curve.
그림 FIG. 16. Strain curve.
그림 FIG. 17. Deformation curve.

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가설 설정

(3) The nature of laser hard damage is a melt damage caused by high temperature.

이론/모형

In this paper, the absorption rate of the polysilicon microbridge components for vertical incidence of a laser beam is calculated through the optical admittance method. Based on the theoretical formula of thermal coupling, combined with the actual parameters and working environment, the finite element method is used to perform parametrical simulation over the hard damage situation of polysilicon microbridge components caused by continuous laser irradiation.
The power transmitted through the microbridge, which is reflected by substrate mostly, then interferes with the incident laser on the bottom of the microbridge, resulting in the increased absorption of light energy. The absorption rate of laser energy by polysilicon thin films is calculated by the optical admittance method [6]. From top to bottom, the film system is as follows: 0.

후속연구

And The pattern of temperature field and stress field variation of the polysilicon microbridge structure under zero bias with the irradiation laser energy is summarized to provide necessary reference for future research in this area.
The above analysis and conclusions provide a reference for studies of laser interference of other uncooled microbolometers, and builds a foundation for the future research on polysilicon detectors in a working state of laser irradiation.

참고문헌 (17)

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