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NTIS 바로가기Journal of semiconductor technology and science, v.14 no.1, 2014년, pp.61 - 69
Kim, Sang-Kon (Department of Applied Physics, Hanyang University)
With the extreme ultraviolet (EUV) lithography, the performance limit of chemically amplified resists has recently been extended to 16- and 11-nm nodes. However, the line edge roughness (LER) and the line width roughness (LWR) are not reduced automatically with this performance extension. In this pa...
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