[논문]A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors

Yucel, H.; Birgul, O.; Uyar, E.; Cubukcu, S.

doi:10.1016/j.net.2018.12.024

A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors 원문보기

Nuclear engineering and technology : an international journal of the Korean Nuclear Society, v.51 no.3, 2019년, pp.731 - 737

Yucel, H. (Ankara University, Institute of Nuclear Sciences) , Birgul, O. (Ankara University, Faculty of Engineering, Dept. of Biomedical Engineering) , Uyar, E. (Ankara University, Institute of Nuclear Sciences) , Cubukcu, S. (Ankara University, Faculty of Engineering, Dept. of Physics Engineering)

Abstract ▼ AI-Helper

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

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제안 방법

In this study, this time-of-flight method was modified for measurement of electron mobility for the case of the built-in CPG CdZnTe detector. In fact, there is no fundamental difference between the TOF method and voltage transient technique.
Nevertheless, additional measurements were carried out for testing the electron (μτ)e product behavior with increasing γ-ray energies.
The pre-amplified signals from both anode and cathode (marked as A and B in setup 2) were directly fed to a difference amplifier (B-A) and the resulting signals due to electrons-only were captured by using a fast digital oscilloscope (LeCroy Wave Runner Model 62xi, frequency: 600 MHz, maximum sampling rate: 10 GS/s).
These signals were then evaluated to derive the rise time information from each captured signal by employing MATLAB™.

대상 데이터

Hence, low energy γ-ray sources (e.g. 59.6 keV (241Am) and 88 keV (109Cd)) were used in the measurements.
In this study, the mobility and mobility-lifetime product were investigated in three large-volume coplanar grid CZT detectors. For low energy photon irradiation (59.
The radioisotope sources, 22Na, 57Co, 54Mn, 60Co, 65Zn, 109Cd and 137Cs purchased from Eckert&Ziegler Inc. and Czech Metrology Institute were used in the measurements.
Three coplanar grid CZT detectors with 1000 mm3, 1687.5 mm3 and 2250 mm3 size (purchased from eV Products Inc.) were used in this study.

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A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors 원문보기

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A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors 원문보기

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