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NTIS 바로가기한국정보통신학회논문지 = Journal of the Korea Institute of Information and Communication Engineering, v.24 no.2, 2020년, pp.321 - 324
Jang, Won-Ho (School of Electronic and Electrical Engineering, Hongik University) , Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate regio...
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J. Millan, P. Godignon, X. Perpina, A. P. Tomas, and J. Rebollo, "A Survey of Wide Bandgap Power Semiconductor Devices," IEEE Transactions on Power Electronics, vol. 29, no.5, pp. 2155-2162, May. 2014.
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Y. J. Han, S. Xue, W. P. Guo, C. Z. Sun, Z. B. Hao, and Y. Luo, "Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl 2 /N 2 /O 2 Plasmas," Japanese Journal of Applied Physics, vol. 42, pp. 1139-1141, Oct. 2003.
S. J. Pearton, R. J. Shul, and F. Ren, "A Review of Dry Etching of GaN and Related Materials," MRS Internet Journal Nitride Semiconductor Research, vol. 5, no. 11, Nov. 2000.
K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, and H. Temkin, "Plasma etching of AlN/AlGaInN superlattices for device fabrication," Applied Physics Letters, vol. 81, no. 25, Dec. 2002.
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