참고문헌 (11)

1. Suzuki, N., Hashimoto, Y., H. Yasuda, Yamaki, S. and Mochizuki, Y., “Prediction of polishing pressure distribution in CMP process with airbag type wafer carrier,” CIRP Annals-Manufacturing Technology, Vol. 66, No. 1, pp. 329-332, 2017. 

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2. Park, Y. B., Lee, H. S., Lee, Y. K., Park, S. J. and Jeong, H. D., “Effect of Contact Angle between Retaining Ring and Polishing Pad on Material Removal Uniformity in CMP Process,” International journal of precision engineering and manufacturing, Vol. 14, No. 9, pp. 1513-1518, 2013. 

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3. Won, J. K., Lee, E. S. and Lee, S. G., “The Study on the Wafer Surface and Pad Characteristic for Optimal Condition in Wafer Final Polishing,” Journal of the Korean Society of Manufacturing Process Engineers, Vol. 11, No. 1, pp. 26-32, 2012. 

4. Khannaz, A. J., Kakireddy, R., Jawali, P., Chockalingam, A., Redfield, D., Bajaj, R., Fung, J., Cornejo, M., Yamamura, M., Yuan, Z., Orilall, C., Fu, B., Ganapathi, G., Redeker, F. C. and Patibandla., N. B., "Impact of Pad Material Properties on CMP Performance for Sub-10nm Technologies," ECS Journal of Solid State Science and Technology, Vol. 8, pp. 3063-3068, 2019. 

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5. Park, K. W. and Park, D. S., “Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP,” Journal of the Korean Society of Manufacturing Process Engineers, Vol. 18, No. 8, pp. 44-50, 2019. 

6. Bengochea, L. V., Sampurno, Y., Stuffle, C., Sudargho, F., Han, R. and Philipossian, A., “Effect of Retaining Ring Slot Designs, Conditioning Discs and Conditioning Schemes on the Slurry Bow Wave Width during Chemical Mechanical Planarization,” ECS Journal of Solid State Science and Technology, Vol. 7, No. 5, pp. 253-259, 2018. 

7. Park, J. W., Shin, C. M., Kim, T. S. and Qin, H. Y., "Optimal shape of retainer ring considering edge exclusion and slurry film thickness," Planarization/CMP Technology, 2015 International Conference, pp. 1-2, Sept. 2015. 

8. CNUS Co., LTD., Insert ring for retainer ring structure in chemical-mechanical polishing apparatus, PCT/KR2013/006119, 2013. 

9. STRASBAUGH, CMP retaining ring with soft retaining ring insert, US-0295013, 2014. 

10. Bae, J. H., Lee. H. S., Park, J. H., Nishizawa, H., Kinoshita, M. and Jeong, H. D., “Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide,” Journal of the Korean Institute of Electrical and Electronic Material Engineers, Vol. 23, No. 5, pp. 358-363, 2010. 

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11. Yerriboina, N. P., Kwon, T. Y., Kim, I. K., Kim, I. G. and Park, J. G., "Generation of Pad Debris during Oxide CMP Process and Its Role in Scratch Formation," Journal of The Electrochemical Society, Vol. 158, No. 4, H394-H400, 2011. 

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