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NTIS 바로가기Journal of sensor science and technology = 센서학회지, v.29 no.4, 2020년, pp.266 - 269
김준규 (경북대학교 전자공학부) , 김대현 (경북대학교 전자공학부)
In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In0.7Ga0.3...
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H. Tseng, Y. Fang, S. Zhong, and M. J. W. Rodwell, "InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing", 2019 Device Res. Conf., pp. 183-184, University of Michigan, United States, 2019.
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