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NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.34 no.4, 2021년, pp.251 - 255
김홍래 (성균관대학교 전자전기컴퓨터공학과) , 팜뒤퐁 (성균관대학교 전자전기컴퓨터공학과) , 오동현 (성균관대학교 전자전기컴퓨터공학과) , 박소민 (성균관대학교 전자전기컴퓨터공학과) , 라벨로 마테우스 (성균관대학교 태양광시스템공학협동과정) , 김영국 (성균관대학교 정보통신대학) , 이준신 (성균관대학교 정보통신대학)
a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap ...
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