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NTIS 바로가기Current photovoltaic research = 한국태양광발전학회논문지, v.9 no.3, 2021년, pp.96 - 105
Kim, Suncheul (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology) , Lee, Ho Jin (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology) , Ahn, Byung Tae (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology) , Shin, Dong Hyeop (Photovoltaic Team, Korea Institute of Energy Research) , Kim, Kihwan (Photovoltaic Team, Korea Institute of Energy Research) , Yun, Jae Ho (Photovoltaic Team, Korea Institute of Energy Research)
Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se2 (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer g...
M. Nakamura, K. Yamaguchi, Y. Kimoto, Y. Yasaki, Cd-Free Cu(In,Ga)(Se,S) 2 thin-film solar cell with record efficiency of 23.35%, IEEE J. Photovoltaics, 9, 1863-1867 (2019).
J. Chantana, Y. Kawano, T. Nishimura, Y. Kimoto, T. Kato, H. Sugimoto, T. Minemoto, 22%-efficient Cd-free Cu(In,Ga)(S,Se) 2 solar cell by all-dry process using Zn 0.8 Mg 0.2 O and Zn 0.9 Mg 0.1,/sub>O:B as buffer and transparent conductive oxide layers, Progress in Photovoltaics: Research and Applications, Appl., 28, 79-89 (2020).
J. Chantana, Y. Kawano, T. Njshmura, Y. Kimoto, T. Kato, H. Sugimoto, T. Minemoto, Transparent electrode and buffer layer combination for reducing carrier recombination and optical loss realizing over a 22%-efficient Cd-free alkaline-treated Cu(In,Ga)(S,Se) 2 solar cell by the all-dry process, ACS Applied Materials and Interfaces, 2, 22298-22307 (2020).
S. Sinha, D. K. Nandi, P. S. Pawar, S. H. Kim, J. Heo, A review on atomic layer deposited buffer layers for Cu(In,Ga)Se 2 (CIGS) thin film solar cells: Past, present, and future, Solar Energy, 290, 515-537 (2020).
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E. Handick, P. Reinhard. J. H. Alsmeier, Leonard Kohler, Fabian Pianezzi, S. Krause, M. Gorgoi, E. Ikenaga, N. Koch, R. G. Wilks, S. Buecheler, A. N. Tiwari, M. Bar, Potassium postdeposition treatment-induced band gap widening at Cu(In,Ga)Se 2 surfaces - reason for performance leap?, ACS Applied Materials and Interfaces, 7, 27414-27420 (2015).
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S. C. Kim, Y. M. Ko, S. T. Kim, Y. W. Choi, J. K. Park, B. T. Ahn, Reduction of point defects and Cu surface composition in Cu(In,Ga)Se 2 film by Se annealing with a NaF overlayer at intermediate temperatures, Current Applied Physics, 17, 820-828 (2017).
S. T. Kim, L. Larina, J. H. Yun, B. Shin, B. T. Ahn, Surface passivation and point defect control in Cu(In,Ga)Se 2 films with a Na2S post deposition treatment for higher than 19% CIGS cell performance, Sustainable Energy Fuels, 3, 709 (2019).
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