[논문]Characterization of an In2Se3 Passivation Layer for CIGS Solar Cells with Cd-free Zn-containing Atomic-layer-deposited Buffers

Kim, Suncheul; Lee, Ho Jin; Ahn, Byung Tae; Shin, Dong Hyeop; Kim, Kihwan; Yun, Jae Ho

doi:10.21218/cpr.2021.9.3.096

Characterization of an In2Se3 Passivation Layer for CIGS Solar Cells with Cd-free Zn-containing Atomic-layer-deposited Buffers 원문보기

Current photovoltaic research = 한국태양광발전학회논문지, v.9 no.3, 2021년, pp.96 - 105

Kim, Suncheul (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology) , Lee, Ho Jin (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology) , Ahn, Byung Tae (Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology) , Shin, Dong Hyeop (Photovoltaic Team, Korea Institute of Energy Research) , Kim, Kihwan (Photovoltaic Team, Korea Institute of Energy Research) , Yun, Jae Ho (Photovoltaic Team, Korea Institute of Energy Research)

Abstract ▼ AI-Helper

Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se2 (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In2Se3 film as a possible diffusion barrier layer because In2Se3 has no Zn component. It was found that an In2Se3 layer grown at 300℃ was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In2Se3 had a large potential barrier in the valence band at the In2Se3/CIGS interface. Therefore, In2Se3 passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.

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표/그림 (15)

그림 Fig. 1. Zn diffusion into CIGS film during ALD ZnSnO buffer growth at 120°C for two-different growing times¹⁰⁾
그림 Fig. 2. SEM surface image (a) and EDS intensity of 300-nm thick In₂Se₃ film deposited on glass substrate by coevaporation of In and Se at 300°C
그림 Fig. 3. Optical measurement of 300-nm thick In₂Se₃ film deposited on glass substrate by co-evaporation of In and Se at 300°C
그림 Fig. 4. LTPL spectra of In₂Se₃ film at 10K with various laser power densities with 514-nm wavelength
그림 Fig. 5. LTPL intensity change of P1 peak in the In₂Se₃ film as a function of excitation power
그림 Fig. 6. AES depth profiles of Cu/(In+Ga) ratio in the as-deposited CIGS film at 550°C and NaF-PDT CIGS film at 300°C¹⁷⁾
그림 Fig. 7. Raman spectra of In-Se layers grown at 300°C and 400°C by supplying In and Se on as-deposited CIGS film and an in-Se layer grown at 300°C on Mo substrate
그림 Fig. 8. TEM cross-sectional images of In-Se layers grown at 300°C (a) and 400° (b), by supplying In and Se on as-deposited CIGS film which was grown at 550°C
그림 Fig. 9. Cross-sectional EDS analysis of In₂Se₃/CIGS film, where the In₂Se₃ layer was grown at 300°C by supplying In and Se on as-deposited CIGS film
그림 Fig. 10. Cross-sectional EDS analysis of CuInSe₂/CIGS film, where In₂Se₃ layer was grown at 400°C by supplying In and Se on CIGS film
그림 Fig. 11. XPS depth spectra of Cu with the In₂Se₃ surface layer (a) and with the CuInSe₂ surface layer (b)
그림 Fig. 12. SIMS depth profiles of Zn atoms on the surfaces of asdeposited CIGS film, NaF-PDT CIGS film, and In₂Se₃ film
그림 Fig. 13. SIMS depth profiles of Zn atoms in the as-deposited CIGS film with and without In₂Se₃ passivation layer
그림 Fig. 14. XPS valance band spectra at the surfaces of as-deposited CIGS, NaF-PDT CIGS, and In₂Se₃ films
그림 Fig. 15. Schematic of electronic band structure with In₂Se₃ passivation layer in Zn-containing buffer/NaF-PDT CIGS structure

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