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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.25 no.3, 2021년, pp.501 - 505
공희성 (Dept. of Electrical Engineering, Korea University) , 조경아 (Dept. of Electrical Engineering, Korea University) , 김상식 (Dept. of Electrical Engineering, Korea University)
In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO2 and the mixed layers of HfO2 and Al2O3, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO2 was used as the...
I. Choi, M. Kim, N. On, A. Song, K. Chung, H. Jeong, J. Park and J. Jeong, "Achieving High Moility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin Film Transistors," IEEE Trans. Electron Devices vol.67, pp.1014-1020, 2020. DOI: 10.1109/TED.2020.2968592
H. Lee, K. Cho and S. Kim, "Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates," Semicond. Sci. Technol. vol.35, pp.065014, 2020. DOI: 10.1088/1361-6641/ab8439
D. Kim, K. Cho, S. Woo and S. Kim, "Electrical characteristics of amorphous indium-tin-gallium-zinc oxide TFTs under positive gate bias stress," Electron. Lett. vol. 56, pp.102-104, 2020. DOI: 10.1049/el.2019.2784
P. Ma, J. Sun, G. Zhang, G. Liang, Q. Xin, Y. Li and A. Song, "Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device," Journal of Alloys and Compounds vol.792, pp.543-549, 2019. DOI: 10.1016/j.jallcom.2019.04.015
Y. Ding, and D. Misra, "Oxide structure-dependent interfacial layer defects of HfAlO/SiO 2 /Si stack analyzed by conductance method," J. Vac. Sci. Technol. B, vol.33, 021203, 2015. DOI: 10.1116/1.4913280
B. Lu, H. Lv, Y. Zhang and C. Liu, "Composition of HfAlO, HfO 2 /Al 2 O 3 , and HfO 2 on n-type GaAs using atomic layer deposition," Superlattices and Microstructures vol.99, pp.54-57, 2016. DOI: 10.1016/j.spmi.2016.07.032
C. Mahata, Y. Byun, C. An, S. Choi, Y. An and H. Kim, "Comparative Study of Atomic-LayerDeposited Stacked (HfO 2 /Al 2 O 3 ) and Nanolaminated (HfAlO x ) Dielectrics on In 0.53 Ga 0.47 As," ACS Appl. Mater. Interfaces vol.5, pp.4195-4201, 2013. DOI: 10.1021/am400368x
D. Won, H. Kim, M. Nguyen, J. Myoung, R. Choi and H. Yoon, "Residual Image Suppression Through Annealing Process of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor for Plastic Organic Light-Emitting Diode Display," J. Nanosci. Nanotechnol. vol.20, pp.6877-6883, 2020. DOI: 10.1166/jnn.2020.18807
Z. Ye, Y. Yuan, H. Xu, Y. Liu, J. Luo, W, M. Wong, "Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory," IEEE Trans. Electron Devices vol.64, pp.438-446, 2017. DOI: 10.1109/ted.2016.2641476
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