[논문]CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging

Jang, Juneyoung; Heo, Wonbin; Kong, Jaesung; Kim, Young-Mo; Shin, Jang-Kyoo

doi:10.46670/jsst.2021.30.5.295

CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging 원문보기

Journal of sensor science and technology = 센서학회지, v.30 no.5, 2021년, pp.295 - 299

Jang, Juneyoung (School of Electronic and Electrical Engineering, Kyungpook National Unversity) , Heo, Wonbin (School of Electronic and Electrical Engineering, Kyungpook National Unversity) , Kong, Jaesung (Korea Polytechnic Robot Campus) , Kim, Young-Mo (School of Electronic and Electrical Engineering, Kyungpook National Unversity) , Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National Unversity)

Abstract ▼ AI-Helper

In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

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참고문헌 (12)

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CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging 원문보기

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