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NTIS 바로가기전력전자학회 논문지 = The Transactions of the Korean Institute of Power Electronics, v.26 no.5, 2021년, pp.325 - 333
한석규 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 노용수 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 현병조 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 박준성 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 주동명 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute)
A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lo...
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