[논문]GaN HEMT를 적용한 3kW급 계통연계 태양광 인버터의 방열 설계 및 개발

한석규; 노용수; 현병조; 박준성; 주동명

doi:10.6113/tkpe.2021.26.5.325

GaN HEMT를 적용한 3kW급 계통연계 태양광 인버터의 방열 설계 및 개발
Development of a 3 kW Grid-tied PV Inverter With GaN HEMT Considering Thermal Considerations 원문보기

전력전자학회 논문지 = The Transactions of the Korean Institute of Power Electronics, v.26 no.5, 2021년, pp.325 - 333

한석규 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 노용수 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 현병조 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 박준성 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) , 주동명 (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute)

Abstract ▼ AI-Helper

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

주제어

표/그림 (19)

그림 Fig. 1. Cumulative installed domestic PV generation.
그림 Fig. 2. Material characteristics for power semiconductor.
표 TABLE I MATERIAL PROPERTIES OF GAN, SIC AND SI
그림 Fig. 3. Topology of developed PV inverter.
표 TABLE II SPECIFICATIONS OF DEVELOPED PV INVERTER
표 TABLE III KEY PARAMETERS OF DESIGNED GAN HEMT DEVICES^[10]-[12]
그림 Fig. 4. Thermal models of a SMD packaged power semi-conductor.
그림 Fig. 5. Thermal resistance of a aluminium heatsink.
표 TABLE IV CALCULATED THERMAL RESISTANCE FROM JUNCTION TO AMBIENT OF VARIOUS GAN HEMT DEVICES^[10]-[12]
그림 Fig. 6. dv/dt Measurements of IGOT60R070D1 during tuun-on and off.
그림 Fig. 7. Key switching waveform of IGOT60R070D1.
그림 Fig. 8. Block diagram of Gate driver for GaN HEMT bridge.
그림 Fig. 9. PCB Footprint of Link and power losses according to switching frequencies.
그림 Fig. 10. 3kW PV inverter simulation schematic and result.
표 TABLE V DESIGNED PARAMETERS OF A LCL FILTER
그림 Fig. 11. 3 kW PV inverter prototype and experimental setup.
그림 Fig. 12. Experimental waveforms of the GaN HEMT based 3 kW PV inverter.
그림 Fig. 13. Measured efficiency of boost converter and inverter.
그림 Fig. 14. Temperature of GaN HEMT and Inverter-side filter inductor.

참고문헌 (20)

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