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NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.35 no.5, 2022년, pp.504 - 508
최미희 (한밭대학교 신소재공학과) , 신윤지 (한국세라믹기술원 반도체소재센터) , 조성호 (한국세라믹기술원 반도체소재센터) , 정운현 (한국세라믹기술원 반도체소재센터) , 정성민 (한국세라믹기술원 반도체소재센터) , 배시영 (한국세라믹기술원 반도체소재센터)
Single crystal gallium oxide (Ga2O3) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga2O3 substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on ...
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