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NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.36 no.2, 2023년, pp.129 - 135
An analytical threshold voltage model is presented to observe the change in threshold voltage shift ΔVth of a junctionless double gate MOSFET using ferroelectric-metal-SiO2 as a gate oxide film. The negative capacitance transistors using ferroelectric have the characteristics of increasing on...
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