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NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.36 no.3, 2023년, pp.226 - 232
Fucheng Wang (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Simpy Sanyal (College of Information and Communication Engineering, Sungkyunkwan University) , Jiwon Choi (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Jaewoong Cho (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Yifan Hu (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Xinyi Fan (Interdisciplinary Program in Photovoltaic System Engineering, Sungkyunkwan University) , Suresh Kumar Dhungel (College of Information and Communication Engineering, Sungkyunkwan University) , Junsin Yi (College of Information and Communication Engineering, Sungkyunkwan University)
As a potential alternative to flash memory, HfO2/Al2O3 stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO2/Al2O3 stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat tre...
D. Spassov, A. Paskaleva, T. A. Krajewski, E. Guziewicz, G.?Luka, and T. Ivanov, Phys. Status Solidi A, 215, 1700854 (2018).?[DOI: https://doi.org/10.1002/pssa.201700854]
C. Zhao, C. Z. Zhao, S. Taylor, and P. R. Chalker, Materials, 7,?5117 (2014). [DOI: https://doi.org/10.3390/ma7075117]
D. Spassov, A. Paskaleva, E. Guziewicz, W. Wozniak, T.?Stanchev, T. Ivanov, J. Wojewoda-Budka, and M. Janusz-Skuza,?Proc. 21st International School on Condensed Matter Physics?(ISCMP) (IOP Publishing Ltd, Varna, Bulgaria, 2021), p.?012038. [DOI: https://doi.org/10.1088/1742-6596/1762/1/012038]
K. Ramkumar, V. Prabhakar, A. Keshavarzi, I. Kouznetsov, and?S. Geha, MRS Adv., 2, 209 (2017). [DOI: https://doi.org/10.1557/adv.2017.144]
M. Specht, H. Reisinger, F. Hofmann, T. Schulz, E. Landgraf,?R. J. Luyken, W. Rosner, M. Grieb, and L. Risch, Solid-State?Electron., 49, 716 (2005). [DOI: https://doi.org/10.1016/j.sse.2004.09.003]
F. Cerbu, O. Madia, D. V. Andreev, S. Fadida, M. Eizenberg, L.?Breuil, J. G. Lisoni, J. A. Kittl, J. Strand, A. L. Shluger, V. V.?Afanas'ev, M. Houssa, and A. Stesmans, Appl. Phys. Lett., 108,?222901 (2016). [DOI: https://doi.org/10.1063/1.4952718]
J. Kim, J. Kim, E. C. Cho, and J. Yi, ECS J. Solid State Sci.?Technol., 10, 044003 (2021). [DOI: https://doi.org/10.1149/2162-8777/abf2e0]
H. Zhu, J. E. Bon evich, H. Li, C. A. Richter, H. Yuan , O.?Kirillov, and Q. Li, Appl. Phys. Lett., 104, 233504 (2014). [DOI:?https://doi.org/10.1063/1.4883717]
X. D. Huang, R. P. Shi, and P. T. Lai, Appl. Phys. Lett., 104,?162905 (2014). [DOI: https://doi.org/10.1063/1.4873388]
T. M. Pan and W. W. Yeh, IEEE Trans. Electron Devices, 55,?2354 (2008). [DOI: https://doi.org/10.1109/TED.2008.927401]
H. W. You and W. J. Cho, Appl. Phys. Lett., 96, 093506 (2010).?[DOI: https://doi.org/10.1063/1.3337103]
D. Spassov, A. Paskaleva, T. A. Krajewski, E. Guziewicz, and?G. Luka, Nanotechnology, 29, 505206 (2018). [DOI:?https://doi.org/10.1088/1361-6528/aae4d3]
Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, and B. J. Cho,?IEEE Trans. Electron Devices, 53, 654 (2006). [DOI:?https://doi.org/10.1109/TED.2006.870273]
S. Maikap, P. J. Tzeng, T. Y. Wang, H. Y. Lee, C. H. Lin, C. C.?Wang, L. S. Lee, J. R. Yang, and M. J. Tsai, Jpn. J. Appl. Phys., 46, 1803 (2007). [DOI: https://doi.org/10.1143/JJAP.46.1803]
C. Zhu, Z. Huo, Z. Xu, M. Zhang, Q. Wang, J. Liu, S. Long and?M. Liu, Appl. Phys. Lett., 97, 253503 (2010). [DOI:?https://doi.org/10.1063/1.3531559]
X. Lan, X. Ou, Y. Cao, S. Tang, C. Gong, B. Xu, Y. Xia, J. Yin,?A. Li, F. Yan, and Z. Liu, J. Appl. Phys., 114, 044104 (2013).?[DOI: https://doi.org/10.1063/1.4816463]
W. Xiao, C. Liu, Y. Peng, S. Zheng, Q. Feng, C. Zhang, J. Zhang,?Y. Hao, M. Liao, and Y. Zhou, Nanoscale Res. Lett., 14, 254?(2019). [DOI: https://doi.org/10.1186/s11671-019-3063-2]
X. Lan, X. Ou, Y. Lei, C. Gong, Q. Yin, B. Xu, Y. Xia, J. Yin,?and Z. Liu, Appl. Phys. Lett., 103, 192905 (2013). [DOI:?https://doi.org/10.1063/1.4829066]
A. Paskaleva, M. Rommel, A. Hutzler, D. Spassov, and A. J.?Bauer, ACS Appl. Mater. Interfaces, 7, 17032 (2015). 17032-17043. [DOI: https://doi.org/10.1021/acsami.5b03071]
J. Strand, O. A. Dicks, M. Kaviani, and A. L. Shluger,?Microelectron. Eng., 178, 235 (2017). [DOI: https://doi.org/10.1016/j.mee.2017.05.012]
S. Maikap, A. Das, T. Y. Wang, T. C. Tien, and L. B. Chang, J.?Electrochem. Soc., 156, K28 (2009). [DOI: https://doi.org/10.1149/1.3070660]
Z. Hou, Z. Wu, and H. Yin, ECS J. Solid State Sci. Technol., 7,?Q229 (2018). [DOI: https://doi.org/10.1149/2.0011812jss]
D. Spassov, A. Paskaleva, E. Guziewicz, V. Davidovic, S.?Stankovic, S. Djoric-Veljkovic, T. Ivanov, T. Stanchev, and N.?Stojadinovic, Materials, 14, 849 (2021). [DOI: https://doi.org/10.3390/ma14040849]
J. Yoo, S. Kim, W. Jeon, A. Park, D. Choi, and B. Choi, IEEE?Electron Device Lett., 40, 1427 (2019). [DOI: https://doi.org/10.1109/led.2019.2932007]
H. Zhao, Z. Zheng, H. Zhu, L. Wang, B. Li, Z. Zhang, S. Wang,?Q. Yuan, J. Jiao, IEEE Trans. Device Mater. Reliab., 23, 109?(2023). [DOI: https://doi.org/10.1109/tdmr.2023.3234325]
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