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NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.36 no.3, 2023년, pp.298 - 302
박세림 (광운대학교 전자재료공학과) , 이태희 (광운대학교 전자재료공학과) , 김희철 (광운대학교 전자재료공학과) , 김민영 (광운대학교 전자재료공학과) , 문수영 (광운대학교 전자재료공학과) , 이희재 (광운대학교 전자재료공학과) , 변동욱 (광운대학교 전자재료공학과) , 이건희 (광운대학교 전자재료공학과) , 구상모 (광운대학교 전자재료공학과)
In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), and hafnium oxide (HfO2) on the breakdown characteristics of β-Ga2O3 Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was...
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