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NTIS 바로가기Integrated ferroelectrics, v.17 no.1/4, 1997년, pp.471 - 478
Han, Jin-Ping (Center for Microelectronic Materials and Structures, and Department of Electrical Engineering, Yale University, New Haven, CT) , Ma, T. P. (Center for Microelectronic Materials and Structures, and Department of Electrical Engineering, Yale University, New Haven, CT)
The effects of forming gas annealing have been studied on PZT [Pb(Zr,Ti)O3] and SBT (SrBi2Ta2O9) samples with a variety of top electrode materials. It's been found that forming gas annealing causes changes in the remanent polarization, coercive field, and leakage current in both types of samples, a...
ISIF Jones R. E. 94 1994
ISIF 96 Hase Takashi 1996
Kushida-Abdelghafar, Keiko, Miki, Hiroshi, Torii, Kazuyoshi, Fujisaki, Yoshihisa. Electrode-induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors. Applied physics letters, vol.69, no.21, 3188-3190.
Hwang, C. L., Chen, B. A., Ma, T. P., Golz, J. W., Di, Y. D., Halpern, B. L., Schmitt, J. J.. Ferroelectric Pb(Zr, Ti)O3 thin films prepared by Gas Jet Deposition. Integrated ferroelectrics, vol.2, no.1, 221-229.
Integrated Ferroelectrics Han J. P. 6 1996
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