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Thin solid films, v.262 no.1/2, 1995년, pp.234 - 241
Lanford, W.A. (Physics Department, Uppsala University, Box 530, S-751 21 Uppsala, Sweden) , Ding, P.J. (Physics Department, University at Albany, Albany, NY 12222, USA) , Wang, W. (Physics Department, University at Albany, Albany, NY 12222, USA) , Hymes, S. (Center for Integrated Electronics, Rensselaer Polytechnic Institution, Troy, NY 12180, USA) , Muraka, S.P. (Center for Integrated Electronics, Rensselaer Polytechnic Institution, Troy, NY 12180, USA)
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AbstractThe doping of copper with Al and Mg is discussed as a method of passivating the exposed surface of copper films proposed for use as a conductor in microelectronics. Doping by co-deposition and by diffusion from Cu/M/SiO2 bilayers, where M = Al or Mg, is discussed. Annealing such doped films ...
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