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NTIS 바로가기Microelectronic engineering, v.40 no.2, 1998년, pp.85 - 97
Burtsev, A (Laboratory for Electronic Component and Material Technology, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands) , Li, Y.X (Laboratory for Electronic Instrumentation, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands) , Zeijl, H.W (Laboratory for Electronic Component and Material Technology, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands) , Beenakker, C.I.M (Laboratory for Electronic Component and Material Technology, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands)
AbstractAnisotropic etching of silicon has been studied in SF6/O2/He plasma using a multivariable experimental design. It has been found that the main monitored responses of the etching process such as silicon etch rate, selectivity of silicon over oxide, etch uniformity and etch anisotropy were inf...
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