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Microelectronic engineering, v.40 no.2, 1998년, pp.85 - 97
Burtsev, A (Laboratory for Electronic Component and Material Technology, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands) , Li, Y.X (Laboratory for Electronic Instrumentation, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands) , Zeijl, H.W (Laboratory for Electronic Component and Material Technology, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands) , Beenakker, C.I.M (Laboratory for Electronic Component and Material Technology, Department of Electrical Engineering, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands)
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AbstractAnisotropic etching of silicon has been studied in SF6/O2/He plasma using a multivariable experimental design. It has been found that the main monitored responses of the etching process such as silicon etch rate, selectivity of silicon over oxide, etch uniformity and etch anisotropy were inf...
J. Electrochem. Soc. Gogolides 136 1147 1989 10.1149/1.2096809 n+ polysilicon etching in CCl4/He discharges: Characterization and modeling
IEEE Trans. Semicond. Manuf. May 4 83 1991 10.1109/66.79720 Statistical experimental design in plasma etch modeling
Proc. SPIE Rangelow 1392 240 1990 10.1117/12.48918 Chromine or bromine chemistry in RIE Si-trench etching
J. Vac. Sci. Technol. Watts A 10 1313 1992 10.1116/1.578245 Low temperature etching of silicon trenches with SF6 in an electron cyclotron resonance reactor
J. Electrochem. Soc. Lii 137 3633 1990 10.1149/1.2086279 Plasma etching of silicon in SF6
Microelec. Engin. Bartha 27 453 1995 10.1016/0167-9317(94)00144-J Low temperature etching of Si in high density plasma using SF6/O2
J. Electrochem. Soc. Syau 138 3076 1991 10.1149/1.2085371 Reactive ion etching of silicon trenches using SF6/O2 gas mixtures
Vacuum Tandon 42 837 1991 10.1016/0042-207X(91)90120-8 The characteristics of reactive ion etching of polysilicon using SF6/O2 and their interdependence
J. Electrochem. Soc. Kopalidis 139 839 1991 10.1149/1.2069313 Langmuir probe measurements and characterization of silicon etching in SF6/O2 discharges
Microelec. Engin. Yunkin 27 463 1995 10.1016/0167-9317(94)00146-L Reactive ion etching of silicon submicron-sized trenches in SF6/C2Cl3F3 plasma
Microelec. Engin. Gogolides 27 449 1995 10.1016/0167-9317(94)00143-I Highly anisotropic room-temperature sub-half micron Si reactive ion etching using fluorine only containing gases
Microelec. Engin. Jansen 27 475 1995 10.1016/0167-9317(94)00149-O The black silicon method II: The effect of mask material and loading on the reactive ion etching of deep silicon trenches
G.E.P. Box, W.G. Hunter, J.S. Hunter, Statistics for experimenters, Wiley, New York, 1978.
G.E.P. Box, N.R. Draper, Empirical model-building and response surfaces, Wiley, New York, 1987.
P.H. Sherrod, Nonlin version 2.5 software, 1992-1993, 4410 Gerald Place, Nashville, TN 37205-3806, USA. Internet: 76166.2640@compuserve.com
S.M. Sze, VLSI technology, McGraw Hill, New York, 1989.
J. Electrochem. Soc. Steinbruchel 132 180 1985 10.1149/1.2113757 Mechanism of dry etching of silicon dioxide
J. Electrochem. Soc. Bruce 129 393 1982 10.1149/1.2123855 He addition to SF6 based plasmas
B.E. Cherrington, Gaseous electronics and gas lasers, Pergamon, Oxford, 1979.
J. Appl. Phys. Arnold 70 330 1991 10.1063/1.350241 Charging of pattern features during plasma etching
J. Appl. Phys. Ingram 68 239 1990 10.1063/1.346819 The influence of substrate topography on ion bombardment in plasma etching
J. Electrochem. Soc. Smadi 139 3356 1992 10.1149/1.2069078 Particle contamination of silicon in SF6 and CF4/O2 RF etch plasmas
J. Electrochem. Soc. Schwartz 130 1898 1983 10.1149/1.2120120 The effects of arsenic doping in reactive ion etching of silicon in chlorinated plasmas
The Electrochem. Soc., ECS Proc. Powell 89, 9 498 1989 Deep Si trench etching with a high rate process through a n/n+/p type structure, using a triode configured reactor Proc. 2nd Symp. ULSL and Technol.
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