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Journal of the European Ceramic Society, v.19 no.6/7, 1999년, pp.1463 - 1466
Roeder, J.F (Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810, USA) , Hendrix, B.C (Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810, USA) , Hintermaier, F (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany) , Desrochers, D.A (Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810, USA) , Baum, T.H (Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810, USA) , Bhandari, G (Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810, USA) , Chappuis, M (Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810, USA) , Van Buskirk, P.C (Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810, USA) , Dehm, C (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany) , Fritsch, E (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany) , Nagel, N (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany) , Wendt, H (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany) , Cerva, H (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany) , Hönlein, W (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany) , Mazuré, C (Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, Ge)
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AbstractThin films of Sr1−xBi2+xTa2O9 (SBT) have been deposited by metalorganic chemical vapor deposition (MOCVD) on 150mm Si wafers with Pt/Ti electrodes. The choice of Bi precursor significantly affects the process; film homogeneity is significantly improved when using a β-diketonate...
10.1038/374627a0 Paz de Araujo, C. A., Cuchiaro, J. D., McMillian, L. D., Scott, M. C. and Scott, J. F., Fatigue-free ferroelectric capacitors with platinum electrodes. Nature, 1995, 374, 627-629.
10.1080/10584589708013039 Amanuma, K. and Kunio, T., Electrical characterization SrBi2Ta2O9 capacitors for non-volatile memory application. Integrated Ferroelectrics, 1997, 16, 175-182.
10.1557/PROC-415-195 Ami, T., Hironaka, K., Isobe, C., Nagel, N., Sugiyama, M., Ikeda, Y., Wanatabe, K., Machida, A., Miura, K. and Tanaka, M., Preparation and properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using flash-MOCVD. In Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II, ed. S. B. Desu, D. B. Beach and P. C. Van Buskirk. Mater. Res. Soc. Proc. 415, Pittsburgh, PA, 1996, pp. 195-200.
10.1557/PROC-415-189 Li, T. K., Zhu, Y. F., Desu, S. B. and Nagata, M., The microstructure and properties of layered oxide thin films fabricated by MOCVD. In Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II, ed. S. B. Desu, D. B. Beach, P. C. Van Buskirk. Mater. Res. Soc. Proc. 415, Pittsburgh, PA, 1996, pp. 189-194.
10.1080/10584589708019981 Isobe, C., Ami, T., Hironaka, K., Wanatabe, K., Sugiyama, M., Nagel, N., Katori, K., Ikeda, Y., Gutleben, C. D., Tanaka, M., Yamoto, H. and Yagi, H., Integrated Ferroelectrics, 1997, 14, 95-103.
10.1557/PROC-493-225 Hendrix, B. C., Hintermaier, F., Desrochers, D. A., Roeder, J. F., Bhandari, G., Chappuis, M., Baum, T. H., VanBuskirk, P. C., Dehm, C., Fritsch, E., Nagel, N., Hoenlein, W. and Mazure, C., MOCVD of SrBi2Ta2O9 for integrated ferroelectric capacitors. In Ferroelectric Thin films VI, ed. S. B. Desu, R. E. Jones, C. M. Foster, R. E. Treece and I. K. Yoo. MRS Proc. Vol 493, 1997, pp. 225-230.
10.1080/10584589808202077 Hintermaier, F., Hendrix, B., Desrochers, D., Roeder, J. F., Baum, T., VanBuskirk, P. C., Bolten, D., Grossman, M., Lohse, O., Schumacher, M., Waser, R., Cerva, H., Dehm, C., Fritsch, E., Hohnlein, W., Mazure, C., Nagel, N., Thwaite, P. and Wendt, H., Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications. Integrated Ferroelectrics, 1998, 21, 367-369.
J. Appl. Phys. Braunstein 73 961 1993 10.1063/1.353310 The process of formation and epitaxial alignment of SrTiO3 thin films prepared by metallo-organic decomposition
J. Vac. Sci. Technol. A Van Buskirk 10A 1578 1992 10.1116/1.578047 Plasma-enhanced metalorganic chemical vapor deposition of BaTiO3 films
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